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1. (WO2014191126) METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/191126 International Application No.: PCT/EP2014/055876
Publication Date: 04.12.2014 International Filing Date: 24.03.2014
IPC:
C30B 7/10 (2006.01) ,C30B 29/40 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10
by application of pressure, e.g. hydrothermal processes
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
Applicants: AMMONO S.A.[PL/PL]; Warszawa Prusa 2 PL-00-377 Warszawa, PL
Inventors: DORADZINSKI, Roman; PL
ZAJAC, Marcin; PL
KUCHARSKI, Robert; PL
Agent: SIELEWIESIUK, Jakub; AOMB Polska Sp. Z O.O. Emilii Plater 53, 28 floor PL-00-113 Warszawa, PL
Priority Data:
P.40414930.05.2013PL
Title (EN) METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD
(FR) PROCÉDÉ D'OBTENTION DE NITRURE CONTENANT DU GALLIUM MONOCRISTALLIN, ET NITRURE CONTENANT DU GALLIUM MONOCRISTALLIN OBTENU PAR CE PROCÉDÉ
Abstract:
(EN) The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely: a)an oxygen getter in a molar ratio to ammonia ranging from 0.0001 to 0.2, b)an acceptor dopant in a molar ratio to ammonia not higher than 0.001. The invention also includes monocrystalline gallium-containing nitride, obtained by this method. (20 claims)
(FR) L'invention concerne un procédé d'obtention de nitrure contenant du gallium monocristallin, à partir d'une charge contenant du gallium dans l'environnement d'un solvant contenant de l'ammoniac supercritique avec l'addition d'un agent de minéralisation, contenant un élément du groupe I (IUPAC, 1989). Dans ledit procédé, dans un autoclave, deux zones de température sont générées, c'est-à-dire une zone de dissolution de température plus basse, contenant une charge, et en dessous de celle-ci, une zone de cristallisation de température plus haute, contenant au moins un germe, un processus de dissolution de la charge et un processus de cristallisation du nitrure contenant du gallium sur le ou les germes sont réalisés, ledit procédé étant caractérisé en ce qu'au moins deux composants additionnels sont introduits dans l'environnement de processus, à savoir : a) un getter à oxygène dans un rapport molaire à l'ammoniac allant de 0,0001 à 0,2, b) un dopant accepteur dans un rapport molaire à l'ammoniac inférieur ou égal à 0,001. L'invention concerne également un nitrure contenant du gallium monocristallin obtenu par ce procédé. (20 revendications)
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)