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1. (WO2014190069) ENHANCEMENT-MODE TRANSISTORS WITH INCREASED THRESHOLD VOLTAGE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/190069    International Application No.:    PCT/US2014/038996
Publication Date: 27.11.2014 International Filing Date: 21.05.2014
IPC:
H01L 29/778 (2006.01), H01L 29/423 (2006.01), H01L 29/66 (2006.01)
Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY [US/US]; 77 Massachusetts Avenue Cambridge, MA 02139 (US)
Inventors: ZHANG, Yuhao; (US).
PALACIOS, Tomas, Apostol; (US)
Agent: JENSEN, Robert, A.; (US)
Priority Data:
61/825,694 21.05.2013 US
Title (EN) ENHANCEMENT-MODE TRANSISTORS WITH INCREASED THRESHOLD VOLTAGE
(FR) TRANSISTORS À ENRICHISSEMENT À TENSION SEUIL AMÉLIORÉ
Abstract: front page image
(EN)A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is located between the semiconductor region and the gate. Negatively charged ions are located within the dielectric layer underneath the gate.
(FR)L'invention concerne un transistor à effet de champ comprenant une source, un drain, une grille, une région semi-conductrice, et une région diélectrique. La région diélectrique est située entre la région semi-conductrice et la grille. Des ions négativement chargés sont situés à l'intérieur de la couche diélectrique sous la grille.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)