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Machine translation
1. (WO2014189360) A CMOS METHOD OF FABRICATING A COMBINATION OF AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) AND MOSFET DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/189360    International Application No.:    PCT/MY2014/000091
Publication Date: 27.11.2014 International Filing Date: 05.05.2014
IPC:
G01N 27/414 (2006.01)
Applicants: MIMOS BERHAD [MY/MY]; Technology Park Malaysia 57000 Kuala Lumpur (MY)
Inventors: BUYONG, Muhamad Ramdzan; (MY).
MOHD, Zain, Azlina; (MY).
MOHD, Zaini, Khairil Mazwan; (MY).
WAN SABLI, Sharaifah Kamariah; (MY).
MAT HUSSIN, Mohd Rofei; (MY)
Agent: KAUR, Sushil; Aetas Intellectual Property Solutions D-6, Sunway PJ@51A, Jalan SS9A/19 Section 51A, 47300 Petaling Jaya Selangor (MY)
Priority Data:
PI 2013700830 21.05.2013 MY
Title (EN) A CMOS METHOD OF FABRICATING A COMBINATION OF AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) AND MOSFET DEVICE
(FR) PROCÉDÉ CMOS DE FABRICATION D'UNE COMBINAISON D'UN TRANSISTOR À EFFET DE CHAMP SENSIBLE AUX IONS (ISFET) ET D'UN DISPOSITIF MOSFET
Abstract: front page image
(EN)A method of fabricating ion-sensitive field-effect transistor (ISFET) device by using Complementary metal-oxide-semiconductor (CMOS) compatible is provided, the method includes the steps of marking and etching a silicon layer (101), depositing an oxide layer (102), as well as implanting doping patterns on the silicon and oxide layers (101, 102), depositing a silicon nitride layer (104), sputtering and etching metal.
(FR)L'invention concerne un procédé de fabrication d'un transistor à effet de champ sensible aux ions (ISFET) au moyen d'un semiconducteur à oxyde de métal complémentaire (CMOS) compatible. Le procédé comprend les étapes consistant à marquer et à graver une couche de silicium (101), à déposer une couche d'oxyde (102), à implanter des motifs de dopage sur les couches de silicium et d'oxyde (101, 102), à déposer une couche de nitrure de silicium (104) et à pulvériser et à graver le métal.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)