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Machine translation
1. (WO2014189194) SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/189194    International Application No.:    PCT/KR2014/000653
Publication Date: 27.11.2014 International Filing Date: 23.01.2014
IPC:
C30B 13/00 (2006.01), C30B 15/00 (2006.01), C30B 29/06 (2006.01)
Applicants: LG SILTRON INCORPORATED [KR/KR]; 53 Imsu-ro, Gumi-si Gyeongsangbuk-do 730-724 (KR)
Inventors: HONG, Young Ho; (KR).
PARK, Hyun Woo; (KR)
Agent: PARK, Young Bok; KPH & Associates 2nd Floor, Erum Bldg. 225-18, Pangyoyeok-ro Bundang-gu, Seongnam-si Gyeonggi-do 463-400 (KR)
Priority Data:
10-2013-0056958 21.05.2013 KR
Title (EN) SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR
(FR) LINGOT MONOCRISTALLIN DE SILICIUM ET TRANCHE POUR SEMI-CONDUCTEUR
(KO) 반도체용 실리콘 단결정 잉곳 및 웨이퍼
Abstract: front page image
(EN)A silicon single crystal ingot and a wafer for a semiconductor in one embodiment include a transition region which dominantly has a crystalline defect having a size of 10 nm to 30 nm among the crystalline defects included in an interstitial dominant defect-free region. The difference between the initial oxygen concentration before performing at least one heat treatment to the ingot and the wafer and the final oxygen concentration after performing at least one heat treatment is 0.5 ppma or less.
(FR)Un mode de réalisation de l'invention concerne un lingot monocristallin de silicium et une tranche pour semi-conducteur qui comprennent une zone de transition qui comporte d'une manière dominante un défaut cristallin ayant une taille de 10 nm à 30 nm parmi les défauts cristallins compris dans une zone interstitielle majoritairement sans défaut. La différence entre la concentration initiale en oxygène, avant que le lingot et la tranche ne subissent au moins un traitement thermique, et la concentration finale d'oxygène, après l'exécution d'au moins un traitement thermique, est inférieure ou égale à 0,5 ppma.
(KO)실시 예의 반도체용 실리콘 단결정 잉곳 및 웨이퍼는 인터스티셜 우세 무결함 영역에 포함된 결정 결함 중 10 ㎚ 내지 30 ㎚ 크기의 결정 결함을 우세하게 갖는 전이 영역을 포함하고, 잉곳 및 웨이퍼에 대해 적어도 한 번의 열처리를 수행하기 이전의 초기 산소 농도와 적어도 한 번의 열처리를 수행한 이후의 최종 산소 농도 차가 0.5 ppma 이하이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)