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1. (WO2014189178) METHOD FOR MANUFACTURING SOLAR CELL HAVING SELECTIVE EMITTER AND SOLAR CELL MANUFACTURED THEREBY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/189178    International Application No.:    PCT/KR2013/008544
Publication Date: 27.11.2014 International Filing Date: 24.09.2013
IPC:
H01L 31/04 (2014.01), H01L 31/18 (2006.01)
Applicants: CHEIL INDUSTRIES INC. [KR/KR]; 290 Gongdan-dong Gumi-si Gyeongsangbuk-do 730-710 (KR)
Inventors: KIM, Yong Hyun; (KR).
LEE, Ji Youn; (KR).
LEE, Jung Chul; (KR)
Agent: AJU KIM CHANG & LEE; 12-13th Floor, Saint Hiyan Building, 174 Saimdang-Ro Seocho-Gu Seoul 137-860 (KR)
Priority Data:
10-2013-0057999 22.05.2013 KR
Title (EN) METHOD FOR MANUFACTURING SOLAR CELL HAVING SELECTIVE EMITTER AND SOLAR CELL MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION DE CELLULES SOLAIRES AYANT UN ÉMETTEUR SÉLECTIF ET CELLULES SOLAIRES FABRIQUÉES AINSI
(KO) 선택적 에미터를 갖는 태양전지의 제조방법 및 이로부터 제조된 태양전지
Abstract: front page image
(EN)The present invention relates to a method for manufacturing a solar cell comprising a selective emitter, the method comprising the steps of: forming an electrode pattern and an alignment mark by performing a first impurity doping locally on one surface of a substrate; and performing a second impurity doping on the entire surface of the first doped substrate, wherein, as a result of the first and second doping, the alignment mark is formed on a first emitter or a second emitter, and the electrode pattern is formed on the second emitter. When manufacturing the selective emitter, the alignment mark is formed by doping processes. The use of the alignment mark can increase the matching of the electrode pattern formed in the selective emitter and the resulting electrode line. Further, a solar cell having the selective emitter has excellent conversion efficiency and a high fill factor value.
(FR)La présente invention concerne un procédé de fabrication d'une cellule solaire comprenant un émetteur sélectif, le procédé consistant à : former un motif d'électrode et un repère d'alignement en effectuant un premier dopage d'impuretés localement sur une surface d'un substrat ; et effectuer un deuxième dopage d'impuretés sur toute la surface du premier substrat dopé, dans lequel, à la suite du premier dopage et du second dopage, le repère d'alignement est formé sur un émetteur premier ou un second émetteur, et le motif d'électrode est formé sur le second émetteur. Lors de la fabrication de l'émetteur sélectif, le repère d'alignement est formé par des processus de dopage. L'utilisation du repère d'alignement peut augmenter la mise en correspondance du motif d'électrode formé dans l'émetteur sélectif et la ligne d'électrode obtenue. Par ailleurs, une cellule solaire ayant l'émetteur sélectif présente une excellente efficacité de conversion et une valeur de facteur de remplissage élevée.
(KO)본 발명은 기판의 일면(一面)에 국부적으로 불순물을 제1 도핑하여 전극패턴부 및 얼라인 마크를 형성하는 단계; 상기 제1 도핑된 기판 전면(全面)에 불순물을 제2 도핑하는 단계;를 포함하고, 상기 제1 도핑과 제2 도핑에 의하여, 상기 얼라인 마크는 제1 에미터부 또는 제2 에미터부로 형성되며, 상기 전극패턴부는 제2 에미터부로 형성되는 것을 특징으로 하는 선택적 에미터를 포함하는 태양전지의 제조방법에 관한 것으로, 선택적 에미터 제조시 도핑에 의하여 얼라인 마크를 형성하고 이를 이용하여 선택적 에미터에 형성된 전극패턴과 제조된 전극 라인의 정합도(整合度)를 높일 수 있으며, 이로부터 제조된 태양전지는 변환효율 및 Fill Factor 값이 우수하다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)