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Machine translation
1. (WO2014189160) POLYSILICON MANUFACTURING APPARATUS USING SINGLE CRYSTAL SILICON BUTTON
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/189160    International Application No.:    PCT/KR2013/004524
Publication Date: 27.11.2014 International Filing Date: 23.05.2013
IPC:
C30B 15/24 (2006.01), C30B 29/06 (2006.01)
Applicants: KOREA INSTITUTE OF ENERGY RESEARCH [KR/KR]; 71-2 Jang-dong, Yuseong-gu, Daejeon 305-343 (KR)
Inventors: LEE, Jin Seok; (KR).
AHN, Young Soo; (KR).
JANG, Bo Yun; (KR).
KIM, Joon Soo; (KR)
Agent: NEIT INTERNATIONAL PATENT LAW FIRM; (Yeoksam-dong, Susan B/D)4F,16, Teheran-ro 6-gil Gangnam-gu Seoul 135-080 (KR)
Priority Data:
Title (EN) POLYSILICON MANUFACTURING APPARATUS USING SINGLE CRYSTAL SILICON BUTTON
(FR) APPAREIL DE FABRICATION DE POLYSILICIUM UTILISANT UN BOUTON DE MONOCRISTAL DE SILICIUM
(KO) 단결정 실리콘버튼을 이용한 폴리실리콘 제조장치
Abstract: front page image
(EN)The present invention relates to a polysilicon manufacturing apparatus using a single crystal silicon button, comprising: a vacuum chamber for maintaining a vacuum atmosphere; an electron beam irradiation part, equipped in the vacuum chamber, for irradiating an electron beam; a silicon melting part, which is arranged in a region where the electron beam is irradiated by the electron beam irradiation part, and into which silicon raw materials, in the form of particles, are inserted, such that the silicon materials are melted by the electron beam, thereby producing a silicon melt; a unidirectional coagulation part having a cooling channel in the lower part thereof so as to coagulate the silicon melt supplied from the silicon melting part; and a start block, wherein the start block comprises: a single crystal silicon button which is manufactured separately and equipped inside the unidirectional coagulation part so as to transport the silicon melt supplied from the silicon melting part to the lower part of the unidirectional coagulation part; and a graphite dummy bar which is bonded to the lower surface of the single crystal silicon button so as to enable the single crystal silicon button to move.
(FR)La présente invention concerne un appareil de fabrication de polysilicium utilisant un bouton de monocristal de silicium comprenant: une cloche à vide pour maintenir une atmosphère sous vide, un élément de rayonnement de faisceau d'électrons, monté dans la chambre à vide pour rayonner un faisceau d'électrons, un élément de fusion de silicium qui est disposé dans une région dans laquelle le faisceau d'électrons est rayonné par l'élément de rayonnement de faisceau d'électrons, et dans laquelle des matières premières en silicium sont introduites sous forme de particules, de manière à ce que les matières en silicium sont fondues par le faisceau d'électrons, produisant ainsi un bain de silicium; un élément de coagulation unidirectionnel possédant un canal de refroidissement dans sa partie inférieure permettant de coaguler le bain de silicium fourni par l'élément de fonte de silicium; et un bloc de départ comprenant: un bouton de monocristal de silicium qui est fabriqué séparément et qui est disposé dans l'élément de coagulation unidirectionnel de manière à transporter le bain de silicium fourni par le l'élément de fonte de silicium vers la partie basse de l'élément de coagulation unidirectionnel; et une barre de graphite morte qui est attachée à la partie basse du bouton de monocristal de silicium de manière à permettre au bouton de monocristal de silicium de se déplacer.
(KO)본 발명은 단결정 실리콘버튼을 이용한 폴리실리콘 제조장치에 관한 것으로서, 진공 분위기를 유지하는 진공챔버, 상기 진공챔버에 구비되어 전자빔을 조사하는 전자빔조사부, 입자형태의 실리콘원료가 투입되며, 상기 전자빔조사부로부터 전자빔이 조사되는 영역 내에 배치되어 전자빔에 의해 실리콘원료가 용융되어 실리콘용탕이 만들어지는 실리콘용융부, 하부에 냉각채널이 형성되어 상기 실리콘용융부로부터 공급되는 실리콘용탕을 응고시키는 일방향응고부 및 상기 일방향응고부 내부에 구비되며 별도로 제조되어 상기 실리콘용융부로부터 공급되는 실리콘용탕을 상기 일방향응고부 하부로 이송시키는 단결정 실리콘버튼 및 상기 단결정 실리콘버튼 하면에 접합되며 상기 단결정 실리콘버튼이 이동되도록 하는 흑연더미바를 을 포함하는 스타트블럭을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)