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1. (WO2014188927) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/188927    International Application No.:    PCT/JP2014/062823
Publication Date: 27.11.2014 International Filing Date: 14.05.2014
IPC:
H01L 21/8242 (2006.01), C23C 16/40 (2006.01), C23C 16/455 (2006.01), H01L 21/316 (2006.01), H01L 27/108 (2006.01)
Applicants: PS4 LUXCO S.A.R.L. [LU/LU]; 208, Val des Bons Malades, L-2121 Luxembourg (LU) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
HIROTA, Toshiyuki [JP/JP]; (JP) (US only).
MATSUI, Takakazu [JP/JP]; (JP) (US only)
Inventors: HIROTA, Toshiyuki; (JP).
MATSUI, Takakazu; (JP)
Agent: MIYAZAKI, Teruo; 3F, Tamachi Square, 26-24, Shiba 5-chome, Minato-ku, Tokyo 1080014 (JP)
Priority Data:
2013-106832 21.05.2013 JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN)This semiconductor device is configured to comprise a capacitor that is provided with: a lower electrode (601) which is arranged on a semiconductor substrate; a second protective film (602); a dielectric film (603) which has a defect (610) that extends in the film thickness direction from an upper surface (603S) that faces the second protective film; a third protective film (604) which has at least a defect filling film (604B) that is formed of an insulating body filling the defect (610); a first protective film (605) which covers the dielectric film (603) and the third protective film (604); and an upper electrode (606) which covers the first protective film (605).
(FR)La présente invention concerne un dispositif à semi-conducteur conçu pour comprendre un condensateur qui est pourvu : d'une électrode inférieure (601) disposée sur un substrat semi-conducteur; d'un deuxième film de protection (602); d'un film diélectrique (603) comportant un défaut (610) qui s'étend dans la direction d'épaisseur de film à partir d'une surface supérieure (603S) qui fait face au deuxième film de protection; d'un troisième film de protection (604) comportant au moins un film de remplissage (604B) de défaut qui est constitué d'un corps isolant remplissant le défaut (610); d'un premier film de protection (605) couvrant le film diélectrique (603) et le troisième film de protection (604); et d'une électrode supérieure (606) couvrant le premier film de protection (605).
(JA) 半導体基板上に配置される下部電極601と、第2の保護膜602と、第2の保護膜に対向する上面603Sから膜厚方向に進展した欠陥610を有する誘電体膜603と、欠陥610を埋設した絶縁体からなる欠陥埋設膜604Bを少なくとも有する第3の保護膜604と、誘電体膜603および第3の保護膜604を覆う第1の保護膜605と、第1の保護膜605を覆う上部電極606と、を備えるキャパシタを有する半導体装置の構成とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)