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1. (WO2014188617) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/188617    International Application No.:    PCT/JP2013/079444
Publication Date: 27.11.2014 International Filing Date: 30.10.2013
IPC:
H01L 29/66 (2006.01), H01L 21/336 (2006.01), H01L 29/267 (2006.01), H01L 29/78 (2006.01), H01L 29/786 (2006.01)
Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP)
Inventors: TANABE Akihito; (JP)
Agent: HAYAMI Shinji; Gotanda TG Bldg. 9F, 9-2, Nishi-Gotanda 7-chome, Shinagawa-ku, Tokyo 1410031 (JP)
Priority Data:
2013-107436 21.05.2013 JP
Title (EN) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置および半導体装置の製造方法
Abstract: front page image
(EN)A semiconductor device (100a) includes a first material (an oxide semiconductor film (104)), and a second material (a surface of a substrate (102)). The first material (the oxide semiconductor film (104)) is formed of an oxide semiconductor. The second material (the surface of the substrate (102)) is formed of a semiconductor. In the semiconductor device (100a), a hetero junction is formed by means of the first material (the oxide semiconductor film (104)) and the second material (the surface of the substrate (102)). Furthermore, a tunnel barrier wherein a carrier tunnels between a conduction band and a valence band of the first material (the oxide semiconductor film (104)) and the second material (the surface of the substrate (102)) is formed in the semiconductor device (100a).
(FR)L'invention concerne un dispositif semi-conducteur (100a) qui comprend un premier matériau (un film semi-conducteur en oxyde (104)), et un second matériau (une surface d'un substrat (102)). Le premier matériau (le film semi-conducteur en oxyde (104)) est formé d'un semi-conducteur en oxyde. Le second matériau (la surface du substrat (102)) est formé d'un semi-conducteur. Dans le dispositif semi-conducteur (100a), une hétérojonction est formée à l'aide du premier matériau (le film semi-conducteur en oxyde (104)) et du second matériau (la surface du substrat (102)). En outre, une barrière tunnel dans laquelle des porteurs forment un effet tunnel entre une bande de conduction et une bande de valence du premier matériau (le film semi-conducteur en oxyde (104)) et le second matériau (la surface du substrat (102)) est formée dans le dispositif semi-conducteur (100a).
(JA) 半導体装置(100a)は、第1の材料(酸化物半導体膜(104))と、第2の材料(基板(102)の表面)と、を含んでいる。第1の材料(酸化物半導体膜(104))は、酸化物半導体からなっている。第2の材料(基板(102)の表面)は、半導体からなっている。半導体装置(100a)では、第1の材料(酸化物半導体膜(104))と第2の材料(基板(102)の表面)とによってヘテロ接合が形成されている。そして半導体装置(100a)では、キャリアが第1の材料(酸化物半導体膜(104))と第2の材料(基板(102)の表面)の、伝導帯と価電子帯の間でトンネルするトンネル障壁が形成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)