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1. (WO2014186988) ACTIVE ELEMENT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/186988    International Application No.:    PCT/CN2013/076519
Publication Date: 27.11.2014 International Filing Date: 31.05.2013
IPC:
H01L 27/12 (2006.01), H01L 21/77 (2006.01), H01L 29/786 (2006.01), G02F 1/1362 (2006.01)
Applicants: AU OPTRONICS CORPORATION [CN/CN]; No.1 Li-Hsin Road 2, Science-Based Industrial Park Hsin-Chu, Taiwan (CN)
Inventors: KE, Tsungying; (CN).
WANG, Pinfan; (CN).
HSU, Tsihsuan; (CN).
LEE, Weite; (CN)
Agent: LECOME INTELLECTUAL PROPERTY AGENT LTD.; Floor. 16, Tower B of IN.DO Mansion No.48-Jia Zhichun Road Haidian District Beijing 100098 (CN)
Priority Data:
201310198732.1 24.05.2013 CN
Title (EN) ACTIVE ELEMENT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
(FR) SUBSTRAT-RÉSEAU À ÉLÉMENT ACTIF ET SON PROCÉDÉ DE FABRICATION
(ZH) 主动元件阵列基板及其制造方法
Abstract: front page image
(EN)An active element array substrate (100) and manufacturing method thereof, the active element array substrate (100) comprising a flexible substrate (110), an inorganic barrier layer (120), and at least one active element (130); the inorganic barrier layer (120) covers the flexible substrate (110) and is provided with at least one through hole (122) therein; the through hole (122) exposes the flexible substrate (110); and the active element (130) is located on the inorganic barrier layer (120).
(FR)L'invention concerne un substrat-réseau à élément actif (100) et son procédé de fabrication, ce substrat-réseau à élément actif (100) comprenant un substrat souple (110), une couche barrière inorganique (120) et au moins un élément actif (130) ; la couche barrière inorganique (120) recouvre le substrat souple (110) et comporte au moins un trou traversant (122) ; le trou traversant (122) laisse apparaître le substrat souple (110) ; et l'élément actif (130) est situé sur la couche barrière inorganique (120).
(ZH)一种主动元件阵列基板(100)及其制造方法,主动元件阵列基板(100)包含软质基板(110)、无机阻障层(120)与至少一主动元件(130)。无机阻障层(120)覆盖软质基板(110)。无机阻障层(120)具有至少一贯穿孔(122)于其中,此贯穿孔(122)暴露出软质基板(110)。主动元件(130)位于无机阻障层(120)上。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)