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1. (WO2014185897) NANOCHANNEL ARRAY OF NANOWIRES FOR RESISTIVE MEMORY DEVICES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/185897    International Application No.:    PCT/US2013/041069
Publication Date: 20.11.2014 International Filing Date: 15.05.2013
IPC:
H01L 27/115 (2006.01), H01L 21/8247 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; Hewlett-Packard Company 11445 Compaq Center Drive W. Houston, Texas 77070 (US)
Inventors: WANG, Shih-Yuan; (US).
YANG, Jianhua; (US)
Agent: COLLINS, David W.; Hewlett-Packard Company IP Administration - MS35 3404 E. Harmony Road Fort Collins, Colorado 80528 (US)
Priority Data:
Title (EN) NANOCHANNEL ARRAY OF NANOWIRES FOR RESISTIVE MEMORY DEVICES
(FR) RÉSEAU DE NANOCANAUX DE NANOFILS POUR DISPOSITIFS À MÉMOIRE RÉSISTIVE
Abstract: front page image
(EN)A resistive memory device includes two electrodes sandwiching an insulating region. The device further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
(FR)Un dispositif à mémoire résistive comprend deux électrodes prenant en sandwich une région d'isolation. Le dispositif comprend également un réseau de nanocanaux constituant un chemin conducteur entre deux électrodes. Le réseau de nanocanaux comprend une pluralité de nanofils s'étendant d'une électrode à l'autre.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)