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1. (WO2014185302) METHOD FOR CULTIVATING β-Ga2O3 SINGLE CRYSTAL, AND β-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/185302    International Application No.:    PCT/JP2014/062193
Publication Date: 20.11.2014 International Filing Date: 02.05.2014
IPC:
C30B 29/16 (2006.01), C30B 15/34 (2006.01)
Applicants: TAMURA CORPORATION [JP/JP]; 1-19-43, Higashi-Oizumi, Nerima-ku, Tokyo 1788511 (JP).
KOHA CO., LTD. [JP/JP]; 1-19-43, Higashi-Oizumi, Nerima-ku, Tokyo 1788511 (JP)
Inventors: KOSHI, Kimiyoshi; (JP).
WATANABE, Shinya; (JP)
Agent: HIRATA, Tadao; Hirata & Partners, 29th Floor, Shinjuku Front Tower, 2-21-1, Kitashinjuku, Shinjuku-ku, Tokyo 1690074 (JP)
Priority Data:
2013-101428 13.05.2013 JP
Title (EN) METHOD FOR CULTIVATING β-Ga2O3 SINGLE CRYSTAL, AND β-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
(FR) PROCEDE POUR LA CULTURE DE MONOCRISTAL DE β-Ga2O3 ET SUBSTRAT MONOCRISTALLIN EN β-Ga2O3 ET SON PROCEDE POUR LA PRODUCTION
(JA) β-Ga2O3系単結晶の育成方法、並びにβ-Ga2O3系単結晶基板及びその製造方法
Abstract: front page image
(EN)Provided are: a method for cultivating a β-Ga2O3 single crystal which makes it possible to obtain a flat β-Ga2O3 single crystal having high crystal quality; a β-Ga2O3-single-crystal substrate; and a method for producing the same. Provided is one embodiment which is a method for cultivating a β-Ga2O3 single crystal (25) including a step for contacting a flat seed crystal (20) with a Ga2O3 melt (12), and a step for pulling up the seed crystal (20) and growing a flat β-Ga2O3 single crystal (25) having a principal surface (26a) which intersects a surface (100), in a manner such that the crystal information of the vaporized material (23) of the Ga2O3 melt (12) adhered to the principal surface of the seed crystal (20) is not passed on, wherein when growing the β-Ga2O3 single crystal (25), the shoulder of the β-Ga2O3 single crystal (25) is only widened in the thickness direction (t).
(FR)L'invention porte sur : un procédé pour la culture d'un monocristal de β-Ga2O3 qui permet d'obtenir un monocristal de β-Ga2O3 ayant une haute qualité cristalline; un substrat en monocristal de β-Ga2O3; et un procédé pour sa production. Dans un mode de réalisation le procédé pour la culture d'un monocristal (25) de β-Ga2O3 comprend une étape consistant à mettre en contact un germe cristallin plat (20) avec une masse fondue (12) de Ga2O3 et une étape consistant à tirer le germe cristallin (20) et faire croître un monocristal (25) de β-Ga2O3 plat ayant une surface (26a) principale qui coupe une surface (100), d'une manière telle que les informations de cristal du matériau (23) vaporisé de la masse fondue (12) de Ga2O3 ayant adhéré à la surface principale du germe cristallin (20) ne soient pas transmises, l'épaulement sur le monocristal de β-Ga2O3 (25) lors de la croissance du monocristal de β-Ga2O3 (25) n'étant élargi que dans la direction de l'épaisseur (t).
(JA) 結晶品質の高い平板状のβ-Ga系単結晶を得ることができるβ-Ga系単結晶の育成方法、並びにβ-Ga系単結晶基板及びその製造方法を提供する。 一実施の形態において、平板状の種結晶20をGa系融液12に接触させる工程と、種結晶20を引き上げ、種結晶20の主面に付着したGa系融液12の蒸発物23の結晶情報を引き継がないように、(100)面と交わる主面26aを有する平板状のβ-Ga系単結晶25を成長させる工程と、を含み、β-Ga系単結晶25を成長させるときに、厚さ方向tにのみβ-Ga系単結晶25の肩を広げる、β-Ga系単結晶25の育成方法を提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)