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1. (WO2014185274) SILICON SUBSTRATE HAVING FERROELECTRIC FILM ATTACHED THERETO
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/185274    International Application No.:    PCT/JP2014/062039
Publication Date: 20.11.2014 International Filing Date: 01.05.2014
IPC:
H01L 21/316 (2006.01), H01L 21/8246 (2006.01), H01L 27/105 (2006.01), H01L 41/318 (2013.01), H01L 41/319 (2013.01)
Applicants: MITSUBISHI MATERIALS CORPORATION [JP/JP]; 3-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 1008117 (JP)
Inventors: DOI, Toshihiro; (JP).
SAKURAI, Hideaki; (JP).
SOYAMA, Nobuyuki; (JP)
Agent: SUDA, Masayoshi; 6th Floor, Kaneko-en Bldg., 2-13-2, Ikebukuro, Toshima-ku, Tokyo 1710014 (JP)
Priority Data:
2013-100967 13.05.2013 JP
Title (EN) SILICON SUBSTRATE HAVING FERROELECTRIC FILM ATTACHED THERETO
(FR) SUBSTRAT DE SILICIUM AVEC FILM FERROÉLECTRIQUE
(JA) 強誘電体膜付きシリコン基板
Abstract: front page image
(EN)The residual stress in a PZT-type ferroelectric film (12) formed on a substrate body (11) using the sol-gel method is -14MPa to -31MPa, and the ferroelectric film (12) has a crystalline orientation on a surface (100).
(FR)Selon l'invention, la contrainte résiduelle contenue dans un film ferroélectrique (12) à base de titanate-zirconate de plomb formé par procédé sol-gel sur un corps principal de substrat (11), est comprise entre -14MPa et -31MPa. Le film ferroélectrique (12) présente une orientation de cristaux sur une face (100).
(JA) 基板本体11上にゾルゲル法により形成されたPZT系の強誘電体膜12中の残留応力が-14MPa~-31MPaであり、強誘電体膜12が(100)面に結晶配向される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)