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1. (WO2014184689) FOCUSED ION BEAM SYSTEMS AND METHODS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/184689    International Application No.:    PCT/IB2014/059922
Publication Date: 20.11.2014 International Filing Date: 18.03.2014
IPC:
H01J 37/08 (2006.01), H01J 37/05 (2006.01), H01J 37/30 (2006.01)
Applicants: INDIAN INSTITUTE OF TECHNOLOGY KANPUR [IN/IN]; Kanpur Uttar Pradesh 208016 (IN)
Inventors: BHATTACHARJEE, Sudeep; (IN).
MATHEW, Jose Vettiyankal; (IN)
Agent: GAMPA, Sravan, Kumar; K&S Partners | Intellectual Property Attorneys 4121/B, 6th Cross, 19A Main, HAL II Stage (Extension) Bangalore 560038 (IN).
THIPPAPPA, Madhusudan, Siddara; K&S Partners | Intellectual Property Attorneys 4121/B, 6th Cross, 19A Main, HAL II Stage (Extension) Bangalore 560038 (IN).
SHANKARARAJ, Gopinath Arenur; K&S Partners | Intellectual Property Attorneys, 4121/B, 6th Cross, 19A Main, HAL II Stage (Extension) Bangalore 560038 (IN).
RANGAPPA, Paramenahalli, Himantharaju, Dodda; K&S Partners | Intellectual Property Attorneys, 4121/B, 6th Cross, 19A Main, HAL II Stage (Extension) Bangalore 560038 (IN)
Priority Data:
1452/DEL/2013 15.05.2013 IN
Title (EN) FOCUSED ION BEAM SYSTEMS AND METHODS
(FR) SYSTÈMES DE FAISCEAUX D'IONS FOCALISÉS ET PROCÉDÉS
Abstract: front page image
(EN)A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma. The plasma generation chamber includes a plasma confinement device configured to confine the plasma in radial and axial directions within the plasma generation chamber and to form a plasma meniscus at an extraction end of the plasma generation chamber. The focused ion beam system also includes a beam extraction chamber configured to extract a focused ion beam from the confined plasma and to focus the extracted focused ion beam on a workpiece.
(FR)La présente invention se rapporte à un système de faisceau d'ions focalisés. Le système de faisceau d'ions focalisés comprend une chambre de production de plasma configurée pour contenir un gaz source qui est irradié avec des micro-ondes pour produire du plasma. La chambre de production de plasma comprend un dispositif de confinement du plasma configuré pour confiner le plasma dans les directions radiale et axiale dans la chambre de production de plasma et pour former un ménisque plasmatique au niveau d'une extrémité d'extraction de la chambre de production de plasma. Le système de faisceau d'ions focalisés comprend également une chambre d'extraction de faisceau configurée pour extraire un faisceau d'ions focalisés du plasma confiné et pour focaliser le faisceau d'ions focalisés extrait sur une pièce à travailler.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)