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1. (WO2014183418) ORGANIC THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/183418    International Application No.:    PCT/CN2013/088130
Publication Date: 20.11.2014 International Filing Date: 29.11.2013
IPC:
H01L 51/05 (2006.01), H01L 51/40 (2006.01)
Applicants: BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No. 10 Jiuxianqiao Rd., Chaoyang District Beijing 100015 (CN)
Inventors: WANG, Xianghua; (CN).
XIONG, Xianfeng; (CN).
LIU, Ze; (CN).
QIU, Longzhen; (CN)
Agent: LIU, SHEN & ASSOCIATES; 10th Floor, Building 1, 10 Caihefang Road, Haidian District Beijing 100080 (CN)
Priority Data:
201310181851.6 16.05.2013 CN
Title (EN) ORGANIC THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
(FR) TRANSISTOR À FILM MINCE ORGANIQUE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 有机薄膜晶体管及其制备方法
Abstract: front page image
(EN)An organic thin-film transistor and a preparation method therefor. The organic thin-film transistor comprises a substrate, a gate electrode layer (21) and a source-drain electrode layer (24) formed on the substrate, wherein an organic semiconductor layer (25) is formed between a source electrode and a drain electrode of the source-drain electrode layer (24); and an organic insulating layer (23) which is formed between the gate electrode layer (21) and the organic semiconductor layer (25) and is made of an organic polymer material.
(FR)La présente invention concerne un transistor à film mince organique et son procédé de préparation. Le transistor à film mince organique comprend un substrat, une couche d'électrode de grille (21) et une couche d'électrode de source-drain (24) formée sur le substrat, de sorte qu'une couche semi-conductrice organique (25) est formée entre une électrode de source et une électrode de drain de la couche d'électrode de source-drain (24); et une couche isolante organique (23) qui est formée entre la couche d'électrode de grille (21) et la couche semi-conductrice organique (25) et qui est constituée d'un matériau polymère organique.
(ZH)一种有机薄膜晶体管及其制备方法。该有机薄膜晶体管包括基板,形成在所述基板上的栅电极层(21)和源漏电极层(24);在源漏电极层(24)的源漏电极之间形成有有机半导体层(25);以及形成在所述栅电极层(21)和有机半导体层(25)之间且由有机聚合物材料制成的有机绝缘层(23)。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)