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1. (WO2014182697) METHODS FOR THE SYNTHESIS OF ARRAYS OF THIN CRYSTAL GRAINS OF LAYERED SEMICONDUCTORS SNS2 AND SNS AT DESIGNED LOCATIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/182697    International Application No.:    PCT/US2014/036968
Publication Date: 13.11.2014 International Filing Date: 06.05.2014
IPC:
H01L 21/205 (2006.01)
Applicants: THE UNIVERSITY OF HOUSTON SYSTEM [US/US]; 4800 Calhoun Houston, TX 77004 (US).
PENG, Haibing [CN/US]; (US) (US only).
SU, Guoxiong [CN/US]; (US) (US only).
DE, Debtanu [IN/US]; (US) (US only)
Inventors: PENG, Haibing; (US).
SU, Guoxiong; (US).
DE, Debtanu; (US)
Agent: ROURK, Christopher J.; Jackson Walker L.L.P. 901 Main Street, Suite 6000 Dallas, TX 75202 (US)
Priority Data:
61/863,358 07.08.2013 US
61/820,864 08.05.2013 US
Title (EN) METHODS FOR THE SYNTHESIS OF ARRAYS OF THIN CRYSTAL GRAINS OF LAYERED SEMICONDUCTORS SNS2 AND SNS AT DESIGNED LOCATIONS
(FR) PROCÉDÉS POUR LA SYNTHÈSE DE RÉSEAUX DE GRAINS CRISTALLINS FINS DE SEMI-CONDUCTEURS EN COUCHES SNS2 ET DE SNS À DES EMPLACEMENTS DÉSIGNÉS
Abstract: front page image
(EN)Methods of producing arrays of thin crystal grains of layered semiconductors, including the creation of stable atomic-layer-thick to micron-thick membranes of crystalline semiconductors by chemical vapor deposition.
(FR)L'invention concerne des procédés de production de réseaux de grains cristallins fins de semi-conducteurs en couches, qui consistent à créer des membranes stables d'épaisseur comprise entre une épaisseur de couche atomique et une épaisseur de taille micronique de semi-conducteurs cristallins par dépôt chimique en phase vapeur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)