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1. (WO2014182540) DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/182540    International Application No.:    PCT/US2014/036405
Publication Date: 13.11.2014 International Filing Date: 01.05.2014
IPC:
H01L 21/314 (2006.01), C01B 31/04 (2006.01)
Applicants: SUNEDISON SEMICONDUCTOR LIMITED [SG/SG]; 9 Battery Road #15-01, Straits Trading Building Singapore, 049910 (SG).
KANSAS STATE UNIVERSITY RESEARCH FOUNDATION [US/US]; 2005 Research Park Circle Manhattan, Kansas 66502 (US)
Inventors: SEACRIST, Michael R.; (US).
BERRY, Vikas; (US).
NGUYEN, Phong T.; (US)
Agent: SCHUTH, Richard A.; Armstrong Teasdale LLP 7700 Forsyth Blvd. Suite 1800 St. Louis, Missouri 63105 (US)
Priority Data:
13/890,316 09.05.2013 US
Title (EN) DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES
(FR) FORMATION DIRECTE ET SEQUENTIELLE DE MONO-COUCHES DE NITRURE DE BORE ET DE GRAPHENE SUR DES SUBSTRATS
Abstract: front page image
(EN)The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.
(FR)La présente invention concerne de manière générale un procédé de préparation d'une couche de graphène directement sur la surface d'un substrat, tel qu'un substrat à semi-conducteur. La couche de graphène peut être formée en contact direct avec la surface du substrat, ou une couche intermédiaire d'un matériau peut être formée entre la surface de substrat et la couche de graphène.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)