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Machine translation
1. (WO2014182449) ELECTROSTATIC DISCHARGE DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/182449    International Application No.:    PCT/US2014/035076
Publication Date: 13.11.2014 International Filing Date: 23.04.2014
Chapter 2 Demand Filed:    06.03.2015    
IPC:
H01L 27/06 (2006.01), H01L 23/48 (2006.01), H01L 23/60 (2006.01), H01L 25/065 (2006.01), H01L 27/02 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 (US)
Inventors: RAMACHANDRAN, Vidhya; (US).
HENDERSON, Brian M.; (US).
GU, Shiqun; (US).
TAN, Chiew-Guan; (US).
KIM, Jung Pill; (US).
KIM, Taehyun; (US)
Agent: TOLER, JEFFREY G.; 8500 Bluffstone Cove Suite A201 Austin, Texas 78759 (US)
Priority Data:
13/887,723 06.05.2013 US
Title (EN) ELECTROSTATIC DISCHARGE DIODE
(FR) DIODE À DÉCHARGE ÉLECTROSTATIQUE
Abstract: front page image
(EN)A method includes thinning a back-side of a substrate to expose a portion of a first via that is formed in the substrate. The method also includes forming a first diode at the back-side of the substrate. The first diode is coupled to the first via.
(FR)L'invention concerne un procédé consistant à amincir l'envers d'un substrat afin d'exposer une partie d'un premier trou d'interconnexion qui est formé dans le substrat. Le procédé consiste également à former une première diode sur l'enver du substrat. La première diode est couplée au premier trou d'interconnexion.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)