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Machine translation
1. (WO2014179796) III-NITRIDE TRANSISTOR LAYOUT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/179796    International Application No.:    PCT/US2014/036788
Publication Date: 06.11.2014 International Filing Date: 05.05.2014
IPC:
H01L 29/772 (2006.01), H01L 21/335 (2006.01)
Applicants: TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474, Mail Station 3999 Dallas, TX 75265-5474 (US).
TEXAS INSTRUMENTS JAPAN LIMITED [JP/JP]; 24-1, Nishi-Shinjuku 6-chome Shinjuku-ku, Tokyo, 160-8366 (JP) (JP only)
Inventors: PENDHARKAR, Sameer; (US).
TIPIRNENI, Naveen; (US).
JOH, Jungwoo; (US)
Agent: FRANZ, Warren, L.; (US)
Priority Data:
13/886,429 03.05.2013 US
Title (EN) III-NITRIDE TRANSISTOR LAYOUT
(FR) DISPOSITION DE TRANSISTOR DE NITRURE DU GROUPE III
Abstract: front page image
(EN)A semiconductor device (100) containing a GaN FET (124) has an isolating gate structure (112) outside the channel area which is operable to block current in the two-dimensional electron gas between two regions of the semiconductor device. The isolating gate structure(112) is formed concurrently with the gate of the GaN FET, and has a same structure as the gate.
(FR)L'invention concerne un dispositif semi-conducteur (100) qui contient un FET de GaN (124) et qui possède une structure de grille d'isolement (112) à l'extérieur de la surface de canal que l'on peut faire fonctionner pour bloquer le courant dans le gaz d'électrons en deux dimensions entre deux régions du dispositif semi-conducteur. La structure de grille d'isolement (112) est formée simultanément avec la grille du FET de GaN et possède une structure identique à la grille.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)