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Machine translation
1. (WO2014179368) DAMAGE FREE LASER PATTERNING OF TRANSPARENT LAYERS FOR FORMING DOPED REGIONS ON A SOLAR CELL SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/179368    International Application No.:    PCT/US2014/035965
Publication Date: 06.11.2014 International Filing Date: 29.04.2014
IPC:
H01L 31/04 (2014.01), H01L 21/265 (2006.01), H01L 21/205 (2006.01)
Applicants: SOLEXEL, INC. [US/US]; 1530 Mccarthy Blvd Milpitas, CA 95035 (US)
Inventors: RANA, Virendra, V.; (US).
KAPUR, Pawan; (US).
SEUTTER, Sean, M.; (US).
MOSLEHI, Mehrdad, M.; (US)
Agent: WOOD, John Ryan, C.; Solexel, Inc. 1530 McCarthy Blvd Milpitas, CA 95035 (US)
Priority Data:
61/816,830 29.04.2013 US
Title (EN) DAMAGE FREE LASER PATTERNING OF TRANSPARENT LAYERS FOR FORMING DOPED REGIONS ON A SOLAR CELL SUBSTRATE
(FR) RÉALISATION DE MOTIFS PAR LASER SANS DOMMAGES DE COUCHES TRANSPARENTES EN VUE DE FORMER DES RÉGIONS DOPÉES SUR UN SUBSTRAT DE CELLULE SOLAIRE
Abstract: front page image
(EN)The laser patterning methods utilizing a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions which may further improve cell efficiency by completely avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.
(FR)La présente invention concerne des procédés de réalisation de motifs par laser, utilisant un masque dur à absorption laser en combinaison avec une gravure humide afin de former des régions dopées de cellule solaire à motifs. Ces procédés peuvent en outre améliorer le rendement des cellules en évitant complètement l'ablation par laser d'un substrat à semi-conducteurs en sous-nappe que l'on associe à l'ablation d'une couche de passivation transparente en revêtement.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)