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1. (WO2014179163) GLASS WITH DEPLETED LAYER AND POLYCRYSTALLINE-SILICON TFT BUILT THEREON
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/179163    International Application No.:    PCT/US2014/035428
Publication Date: 06.11.2014 International Filing Date: 25.04.2014
IPC:
H01L 21/324 (2006.01), H01L 29/786 (2006.01)
Applicants: CORNING INCORPORATED [US/US]; 1 Riverfront Plaza Corning, New York 14831 (US)
Inventors: CHUANG, Ta Ko; (US).
GU, Yunfeng; (US).
MANLEY, Robert George; (US)
Agent: ABLE, Kevin M; Corning Incorporated Intellectual Property Department SP-Ti-03-01 Corning, New York 14831 (US)
Priority Data:
61/817,536 30.04.2013 US
Title (EN) GLASS WITH DEPLETED LAYER AND POLYCRYSTALLINE-SILICON TFT BUILT THEREON
(FR) VERRE COMPORTANT UNE ZONE DE DÉPLÉTION ET TFT EN SILICIUM POLYCRISTALLIN L'UTILISANT COMME SUPPORT
Abstract: front page image
(EN)There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors ("TFTs") on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.
(FR)Cette divulgation concerne un procédé de traitement chimique d'un substrat en verre pour affichage par traitement d'au moins une surface du substrat en verre à l'aide d'une solution chauffée contenant du HCl pour former une zone de déplétion à la surface et sous la surface du substrat en verre. Cette divulgation concerne également des substrats en verre pour affichage contenant la zone de déplétion obtenue par le procédé décrit. Des procédés de production de transistors à couches minces ("TFT") sur ces substrats en verre pour affichage par dépôt d'une couche Si directement sur la surface chimiquement traitée du substrat en verre, et recuit de la couche Si pour former du silicium polycristallin sont en outre décrits.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)