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1. (WO2014178686) METHOD FOR MANUFACTURING NICKEL SULFIDE THIN FILM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/178686    International Application No.:    PCT/KR2014/003959
Publication Date: 06.11.2014 International Filing Date: 02.05.2014
IPC:
C23C 16/44 (2006.01), C23C 16/448 (2006.01), H01L 21/205 (2006.01)
Applicants: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY [KR/KR]; (Jang-dong), 141, Gajeong-ro, Yuseong-gu Daejeon 305-805 (KR).
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY [KR/KR]; (Sageun-dong) 222, Wangsimni-ro, Seongdong-gu Seoul 133-791 (KR)
Inventors: PARK, Bo-Keun; (KR).
KIM, Chang-Gyoun; (KR).
CHUNG, Taek-Mo; (KR).
SUNG, Myung-Mo; (KR).
HAN, Kyu-Seok; (KR)
Agent: HANYANG PATENT FIRM; (Hanyang building) 12 Nonhyeonro 38-gil, Gangnam-gu Seoul 135-854 (KR)
Priority Data:
10-2013-0050315 03.05.2013 KR
Title (EN) METHOD FOR MANUFACTURING NICKEL SULFIDE THIN FILM
(FR) PROCÉDÉ DE FABRICATION DE COUCHE MINCE DE SULFURE DE NICKEL
(KO) 황화 니켈 박막의 제조 방법
Abstract: front page image
(EN)The present invention relates to a method for manufacturing a nickel sulfide thin film using an atomic layer deposition method, comprising the steps of: a) loading a substrate into a deposition chamber; b) absorbing a nickel precursor represented by chemical formula 1 on the substrate by an atomic layer deposition method; c) removing by-products except for the nickel precursor absorbed on the substrate; d) introducing a sulfur source into the deposition chamber and subjecting the sulfur source to an exchange reaction with the nickel precursor absorbed on the substrate to form a nickel sulfide thin film on the substrate; and e) removing by-products except for the nickel sulfide thin film. In the case of manufacturing a nickel sulfide thin film by the method for manufacturing a nickel sulfide thin film using an atomic layer deposition method according to the present invention, it is possible to form a uniform metal layer, the thickness of which can be easily adjusted, and to relatively decrease the temperature for forming the metal layer on the substrate.
(FR)La présente invention concerne un procédé de fabrication d’une couche mince de sulfure de nickel en utilisant un procédé de dépôt de couche atomique, comprenant les étapes de : a) chargement d’un substrat dans la chambre de dépôt ; b) absorption d’un précurseur de nickel représenté par la formule chimique 1 sur le substrat par un procédé de dépôt de couche atomique ; c) élimination des sous-produits à l’exception du précurseur de nickel adsorbé sur le substrat ; d) introduction d’une source de soufre dans la chambre de dépôt et soumission de la source de soufre à une réaction d’échange avec le précurseur de nickel adsorbé sur le substrat pour former une couche mince de sulfure de nickel sur le substrat ; et e) élimination des sous-produits à l’exception de la couche mince de sulfure de nickel. Dans le cas de la fabrication d’une couche mince de sulfure de nickel par le procédé de fabrication d’une couche mince de sulfure de nickel en utilisant un procédé de dépôt de couche atomique selon la présente invention, il est possible de former une couche métallique uniforme, dont l’épaisseur peut être aisément ajustée, et de diminuer relativement la température pour former la couche métallique sur le substrat.
(KO)본 발명은 a) 증착 챔버 내로 기판을 도입하는 단계; b) 상기 기판 상에 원자층 증착법으로 화학식 1로 표시되는 니켈 전구체를 흡착하는 단계; c) 상기 흡착된 니켈 전구체를 제외한 나머지 부산물을 제거하는 단계; d) 상기 증착 챔버 내로 황 원을 유입시켜, 상기 기판에 흡착된 상기 니켈전구체와 교환 반응시켜 상기 기판 상에 황화 니켈 박막을 형성하는 단계; 및 e) 상기 황화 니켈 박막을 제외한 나머지 부산물을 제거하는 단계;를 포함하는 원자층 증착법을 이용한 황화 니켈 박막의 제조 방법에 관한 것이다. 본 발명의 원자층 증착법(Atomic Layer Deposition)을 이용한 황화 니켈 박막의 제조 방법에 의하여 황화 니켈 박막을 제조하는 경우, 금속층 두께의 조절이 용이하면서도 균일한 금속층을 형성하고, 기판 상에 금속층을 형성하는 온도를 상대적으로 낮출 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)