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1. (WO2014178424) ETCHING METHOD, ETCHING SOLUTION USED IN SAME, ETCHING SOLUTION KIT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/178424    International Application No.:    PCT/JP2014/062069
Publication Date: 06.11.2014 International Filing Date: 01.05.2014
IPC:
H01L 21/306 (2006.01), H01L 21/28 (2006.01), H01L 21/308 (2006.01)
Applicants: FUJIFILM CORPORATION [JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620 (JP)
Inventors: KAMIMURA, Tetsuya; (JP).
KOYAMA, Akiko; (JP).
TAKAHASHI, Satomi; (JP).
MIZUTANI, Atsushi; (JP).
SUGISHIMA, Yasuo; (JP)
Agent: IIDA, Toshizo; ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004 (JP)
Priority Data:
2013-097158 02.05.2013 JP
Title (EN) ETCHING METHOD, ETCHING SOLUTION USED IN SAME, ETCHING SOLUTION KIT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
(FR) PROCÉDÉ D'ATTAQUE, SOLUTION D'ATTAQUE UTILISÉE DANS CELUI-CI, KIT DE SOLUTION D'ATTAQUE, ET PROCÉDÉ DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR
(JA) エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
Abstract: front page image
(EN)The present invention is an etching method which, with regard to a semiconductor substrate having a first layer including germanium (Ge), and a second layer that includes at least one type of specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), selectively removes the second layer, said etching method removing the second layer by causing an etching solution including an organic alkali compound to come into contact with the second layer.
(FR)L'invention concerne un procédé d'attaque qui, en ce qui concerne un substrat semi-conducteur comportant une première couche contenant du germanium (Ge) et une seconde couche contenant au moins un type d'élément métallique spécifique choisi parmi le nickel-platine (NiPt), le titane (Ti), le nickel (Ni) et le cobalt (Co), permet d'éliminer sélectivement la seconde couche, lequel procédé d'attaque élimine la seconde couche en mettant en contact une solution d'attaque contenant un composé alcalin organique avec la seconde couche.
(JA) ゲルマニウム(Ge)を含む第一層と、ニッケルプラチナ(NiPt)、チタン(Ti)、ニッケル(Ni)、およびコバルト(Co)から選ばれる少なくとも1種の特定金属元素を含む第二層とを有する半導体基板について、第二層を選択的に除去するエッチング方法であって、アルカリ化合物を含むエッチング液を第二層に接触させて第二層を除去する半導体基板のエッチング方法。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)