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1. (WO2014178423) ETCHING METHOD, ETCHING SOLUTION USED IN SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/178423    International Application No.:    PCT/JP2014/062068
Publication Date: 06.11.2014 International Filing Date: 01.05.2014
IPC:
H01L 21/308 (2006.01), C23F 1/28 (2006.01), C23F 1/30 (2006.01), H01L 21/28 (2006.01), H01L 21/306 (2006.01)
Applicants: FUJIFILM CORPORATION [JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620 (JP)
Inventors: MURO, Naotsugu; (JP).
KAMIMURA, Tetsuya; (JP).
TAKAHASHI, Satomi; (JP).
KOYAMA, Akiko; (JP).
MIZUTANI, Atsushi; (JP)
Agent: IIDA, Toshizo; ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004 (JP)
Priority Data:
2013-097157 02.05.2013 JP
Title (EN) ETCHING METHOD, ETCHING SOLUTION USED IN SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
(FR) PROCÉDÉ DE GRAVURE, SOLUTION DE GRAVURE UTILISÉE DANS CE DERNIER ET PROCÉDÉ DE PRODUCTION POUR PRODUIT DE SUBSTRAT EN SEMI-CONDUCTEUR
(JA) エッチング方法、これに用いるエッチング液、ならびに半導体基板製品の製造方法
Abstract: front page image
(EN)A semiconductor substrate etching method for selectively removing the second layer from a semiconductor substrate having a first layer including germanium (Ge) and a second layer including at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), and for removing the second layer by bringing an etching solution including a non-halogen-containing acidic compound into contact with the second layer.
(FR)L'invention porte sur un procédé de gravure de substrat en semi-conducteur pour l'élimination sélective de la seconde couche d'un substrat en semi-conducteur ayant une première couche comprenant du germanium (Ge) et une seconde couche comprenant au moins un élément métallique particulier choisi parmi le nickel-platine (NiPt), le titane (Ti), le nickel (Ni) et le cobalt (Co) et pour l'élimination de la seconde couche par la mise en contact d'une solution de gravure comprenant un composé acide non halogéné avec la seconde couche.
(JA) ゲルマニウム(Ge)を含む第一層と、ニッケルプラチナ(NiPt)、チタン(Ti)、ニッケル(Ni)、およびコバルト(Co)から選ばれる少なくとも1種の特定金属元素を含む第二層とを有する半導体基板について、第二層を選択的に除去するエッチング方法であって、ノンハロゲン酸性化合物を含むエッチング液を第二層に接触させて第二層を除去する半導体基板のエッチング方法。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)