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1. (WO2014178422) ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/178422    International Application No.:    PCT/JP2014/062067
Publication Date: 06.11.2014 International Filing Date: 01.05.2014
IPC:
H01L 21/308 (2006.01), H01L 21/28 (2006.01), H01L 21/306 (2006.01)
Applicants: FUJIFILM CORPORATION [JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620 (JP)
Inventors: MIZUTANI, Atsushi; (JP).
KAMIMURA, Tetsuya; (JP).
TAKAHASHI, Satomi; (JP).
KOYAMA, Akiko; (JP)
Agent: IIDA, Toshizo; ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004 (JP)
Priority Data:
2013-097159 02.05.2013 JP
Title (EN) ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
(FR) SOLUTION DE GRAVURE ET TROUSSE POUR SOLUTION DE GRAVURE, PROCÉDÉ DE GRAVURE LES UTILISANT ET PROCÉDÉ DE PRODUCTION POUR PRODUIT DE SUBSTRAT EN SEMI-CONDUCTEUR
(JA) エッチング液およびエッチング液のキット、これを用いたエッチング方法および半導体基板製品の製造方法
Abstract: front page image
(EN)An etching solution which selectively removes the second layer from a semiconductor substrate having a first layer including germanium (Ge) and a second layer including a specific metal element other than germanium (Ge), and which includes a specific acidic compound. [Specific acidic compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or an organic acid]
(FR)L'invention porte sur une solution de gravure qui enlève sélectivement la seconde couche d'un substrat en semi-conducteur ayant une première couche comprenant du germanium (Ge) et une seconde couche comprenant un élément métallique particulier autre que le germanium (Ge) et qui comprend un composé acide particulier. Le composé acide particulier est choisi parmi l'acide sulfurique (H2SO4), l'acide nitrique (HNO3), l'acide phosphorique (H3PO4), l'acide phosphonique (H3PO3) ou un acide organique.
(JA) ゲルマニウム(Ge)を含む第一層と、ゲルマニウム(Ge)以外の特定金属元素を含む第二層とを有する半導体基板について、第二層を選択的に除去するエッチング液であって、下記特定酸性化合物を含むエッチング液。 [特定酸性化合物:硫酸(HSO)、硝酸(HNO)、リン酸(HPO)、ホスホン酸(HPO)、または有機酸]
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)