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|1. (WO2014178328) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE|
|Applicants:||PS5 LUXCO S.A.R.L.
ピーエスファイブ ルクスコ エスエイアールエル
|Title:||SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE|
This invention makes it possible to apply, as an embedded insulation film on a gate electrode in a semiconductor device, an insulation film that has excellent etching properties and yet has a low groove-embedding performance, and to ensure sufficient insulation with regard to the gate electrode and reliably prevent short-circuiting with a contact plug or wiring. A semiconductor device having a groove formed on one surface of a semiconductor substrate (105), a gate electrode (109) formed on the lower part of the groove with a gate insulation film (107) interposed therebetween, a side wall insulation film (110) made of a nitride film formed on the inner wall of the groove above the gate electrode (109), and an embedded insulation film (111) formed in the groove enclosed by the side wall insulation film (110) above the gate electrode (109). The side wall insulation film (110) is shaped so that the width increases closer the bottom part of the groove.