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Pub. No.:    WO/2014/178016    International Application No.:    PCT/IB2014/061118
Publication Date: 06.11.2014 International Filing Date: 30.04.2014
G11C 11/42 (2006.01), G11C 16/18 (2006.01), G11C 13/04 (2006.01)
Applicants: INDIAN INSTITUTE OF SCIENCE [IN/IN]; Department of Physics Bangalore 560012 (IN)
Inventors: ROY, Kallol; (IN).
GHOSH, Arindam; (IN)
Agent: KHURANA & KHURANA, ADVOCATES AND IP ATTORNEYS; S/19-22, GNS Plaza, Opposite Hotel Radisson Blu UPSIDC-Site-IV, Kasna Road 201308 Greater Noida (IN)
Priority Data:
1963/CHE/2013 01.05.2013 IN
Abstract: front page image
(EN)The present invention relates to an opto-electronic switch/memory device utilizing thin layer of exfoliated graphene laid upon monolayer or multilayer of MoS2, forming a hetero-hybrid structure. The specific architecture of the device is planar, which can be made by laying a continuous sheet of graphene on a continuous sheet of MoS2 (graphene-on-MoS2) and electrode contacts are placed only on graphene layer forming an in-plane geometry.
(FR)La présente invention concerne un dispositif optoélectronique de commutateur/mémoire pourvu d'une fine couche de graphène exfolié disposée sur une ou plusieurs couches de MoS2, ce qui forme une structure hétéro-hybride. L'architecture spécifique du dispositif est planaire. A cette fin, une feuille continue de graphène est disposée sur une feuille continue de MoS2 (graphène sur MoS2) et des contacts d'électrodes sont placés uniquement sur la couche de graphène, ce qui forme une géométrie plane.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)