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1. (WO2014176807) STORAGE DEVICE, AND MANUFACTURING METHOD AND ACCESS METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2014/176807    International Application No.:    PCT/CN2013/076482
Publication Date: 06.11.2014 International Filing Date: 30.05.2013
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN/CN]; No.3 Beitucheng West Road, Chaoyang District Beijing 100029 (CN)
Inventors: ZHU, Huilong; (US)
Agent: CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.; 11/F., Bldg. D, International Finance and Economics Center No.87, West 3rd Ring North Rd., Haidian District Beijing 100089 (CN)
Priority Data:
201310160970.3 03.05.2013 CN
Title (EN) STORAGE DEVICE, AND MANUFACTURING METHOD AND ACCESS METHOD THEREOF
(FR) DISPOSITIF DE STOCKAGE, ET SON PROCÉDÉ DE FABRICATION ET D'ACCÈS
(ZH) 存储器件及其制造方法和存取方法
Abstract: front page image
(EN)Disclosed are a storage device, and manufacturing method and access method thereof, an example storage device comprising: a substrate; a back gate formed on the substrate; a transistor comprising fins formed on the opposite sides of the back gate on the substrate; a gate stack formed on the substrate and intersecting with the fins; and a back gate dielectric layer formed on the bottom and side surfaces of the back gate; and on one side of the gate stack, the back gate dielectric layer has a thinning portion in an area facing the fins.
(FR)L'invention concerne un dispositif de stockage et son procédé de fabrication et d'accès, un dispositif de stockage donné à titre d'exemple comprenant : un substrat; une grille arrière formée sur le substrat; un transistor comprenant des ailettes formé sur les côtés opposés de la grille arrière sur le substrat; une pile de grille formée sur le substrat et croisant les ailettes; et un couche diélectrique de grille arrière formée sur les surfaces inférieure et latérales de la grille arrière; et d'un côté de la pile de grille, la couche diélectrique de grille arrière est dotée d'une portion d'amincissement dans une zone faisant face aux ailettes.
(ZH)本申请公开了一种存储器件及其制造方法和存取方法。一示例存储器件可以包括:衬底;在衬底上形成的背栅;晶体管,包括:在衬底上在背栅的相对两侧形成的鳍;以及在衬底上形成的栅堆叠,所述栅堆叠与鳍相交;以及在背栅的底面和侧面上形成的背栅介质层,其中,在栅堆叠的一侧,背栅介质层在面对鳍的区域处具有减薄部分。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)