Processing

Please wait...

Settings

Settings

Goto Application

1. WO2014174911 - SEMICONDUCTOR DEVICE

Publication Number WO/2014/174911
Publication Date 30.10.2014
International Application No. PCT/JP2014/055712
International Filing Date 06.03.2014
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/739 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
CPC
H01L 29/0696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
0696of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H01L 29/7397
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7396with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
7397and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 川上 剛史 KAWAKAMI Tsuyoshi
  • 古川 彰彦 FURUKAWA Akihiko
  • 村上 裕二 MURAKAMI Yuji
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi
Priority Data
2013-08992323.04.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
In order to obtain a semiconductor device, such as an IGBT, having a relatively low on-resistance while minimizing reduction of the saturation current, a semiconductor substrate includes active mesa portions (90), which are mesa portions that face sides of trench gates (2), with a gate insulating film (3) therebetween, and that have injected therein carriers of the same conductivity type as the semiconductor substrate. Each active mesa portion (90) comprises a plurality of types of parts which extend in different directions but with a uniform width, as seen in a plan view of the substrate surface. The plurality of types of parts are connected to one another alternately and periodically so that the active mesa portion (90) extends in a zigzag configuration. The semiconductor substrate has places where adjacent active mesa portions (90) are spaced from each other by a distance greater than the width of the active mesa portions (90).
(FR)
Afin d'obtenir un dispositif à semi-conducteur, tel qu'un transistor bipolaire à porte isolée, présentant une résistance à l'état passant relativement faible, tout en diminuant au minimum la réduction du courant de saturation, un substrat à semi-conducteur comprend des parties mesa actives (90), lesquelles sont des parties mesa tournées vers les côtés des grilles de tranchée (2), un film isolant de grille (3) étant situé entre ces dernières, et dans lesquelles sont injectés des porteurs de charge présentant le même type de conductivité que le substrat à semi-conducteur. Chaque partie mesa active (90) comprend une pluralité de types de parties s'étendant dans différentes directions mais d'une largeur uniforme, comme on le constate dans une vue en plan de la surface du substrat. La pluralité de types de parties sont connectés les uns aux autres en alternance et périodiquement, de telle manière que la partie mesa active (90) s'étend selon une configuration en zigzag. Le substrat à semi-conducteur présente des endroits dans lesquels des parties mesa actives (90) adjacentes sont espacées les unes des autres par une distance supérieure à la largeur des parties mesa actives (90).
(JA)
 IGBT等の半導体装置に関して、飽和電流の低下を抑えつつ、比較的低いオン抵抗を得る。半導体基板は、ゲート絶縁膜(3)を介してトレンチゲート(2)の側面に対面し且つ半導体基板の導電型と同じ導電型のキャリアが注入されるメサ部である活性メサ部(90)を含む。活性メサ部(90)は、基板表面の平面視における延在方向は異なるが一定の幅で延在する複数種類の部分で構成されている。複数種類の部分は、蛇行する一続きの活性メサ部(90)となるように周期的に繰り返して接続されている。半導体基板には活性メサ部(90)の幅に比べて、隣り合う活性メサ部(90)の離間距離の方が大きい箇所が存在する。
Also published as
Latest bibliographic data on file with the International Bureau