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1. WO2014173078 - THIN FILM TRANSISTOR, METHOD FOR MANUFACTUR THEREOF AND ARRAY SUBSTRATE

Publication Number WO/2014/173078
Publication Date 30.10.2014
International Application No. PCT/CN2013/084433
International Filing Date 27.09.2013
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 23/535
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
535including internal interconnections, e.g. cross-under constructions
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 29/66969
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
H01L 29/78618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78618characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applicants
  • 北京京东方光电科技有限公司 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • 阎长江 YAN, Changjiang
  • 龙君 LONG, Jun
  • 朱孝会 ZHU, Xiaohui
  • 谢振宇 XIE, Zhenyu
  • 陈旭 CHEN, Xu
Agents
  • 北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES
Priority Data
201310146651.724.04.2013CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM TRANSISTOR, METHOD FOR MANUFACTUR THEREOF AND ARRAY SUBSTRATE
(FR) TRANSISTOR À COUCHES MINCES, SON PROCÉDÉ DE FABRICATION ET SUBSTRAT DE MATRICE
(ZH) 薄膜晶体管、其制作方法和阵列基板
Abstract
(EN)
Provided are a thin film transistor, a method for manufactur thereof and an array substrate. The thin film transistor comprises: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105'), a source electrode (107a) and a drain electrode (107b) formed on the gate insulating layer (103). The material of the semiconductor layer (105') is an oxide semiconductor, and the material of the source electrode (107a) and the drain electrode (107b) is a doped oxide semiconductor. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105') are disposed in the same layer.
(FR)
La présente invention concerne un transistor à couches minces, son procédé de fabrication et un substrat de matrice. Le transistor à couches minces comporte : une électrode grille (102), formée sur un substrat (101), une couche d'isolation de grille (102) formée sur l'électrode grille (102) et recouvrant au moins une partie du substrat (101), et une couche semi-conductrice (105'), une électrode de source (107a) et une électrode de drain (107b) formées sur la couche d'isolation de grille (103). Le matériau de la couche semi-conductrice (105') est un semi-conducteur à oxyde, et le matériau de l'électrode de source (107a) et de l'électrode de drain (107b) est un semi-conducteur à oxyde dopé. L'électrode de source (107a), l'électrode de drain (107b) et la couche semi-conductrice (105') sont disposées dans la même couche.
(ZH)
提供一种薄膜晶体管、其制作方法以及阵列基板。薄膜晶体管包括:形成于基板(101)上的栅极(102),形成于栅极(102)上并覆盖至少部分基板(101)的栅绝缘层(103),以及形成于栅绝缘层(103)上的半导体层(105')、源极(107a)和漏极(107b)。半导体层(105')的材料为氧化物半导体,源极(107a)、漏极(107b)的材料为掺杂的氧化物半导体。源极(107a)、漏极(107b)与半导体层(105')同层设置。
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