Processing

Please wait...

Settings

Settings

Goto Application

1. WO2014170997 - POWER MODULE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2014/170997
Publication Date 23.10.2014
International Application No. PCT/JP2013/061562
International Filing Date 19.04.2013
IPC
H01L 23/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H01L 23/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
CPC
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 2924/13055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
10Details of semiconductor or other solid state devices to be connected
11Device type
13Discrete devices, e.g. 3 terminal devices
1304Transistor
1305Bipolar Junction Transistor [BJT]
13055Insulated gate bipolar transistor [IGBT]
Applicants
  • 株式会社 日立製作所 HITACHI, LTD. [JP]/[JP]
Inventors
  • 井出 英一 IDE Eiichi
  • 谷江 尚史 TANIE Hisashi
  • 中津 欣也 NAKATSU Kinya
Agents
  • 井上 学 INOUE Manabu
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER MODULE AND MANUFACTURING METHOD THEREFOR
(FR) MODULE DE PUISSANCE, ET PROCÉDÉ DE FABRICATION DE CELUI-CI
(JA) パワーモジュール及びその製造方法
Abstract
(EN)
The purpose of the present invention is to provide the following: a power-module structure that uses a low-thermal-expansion, highly heat-dissipating composite material and can improve heat-dissipation efficiency while reducing the thermal stress applied to a power module; and a method for manufacturing said power-module structure. This power module is provided with the following: a base comprising a carbon-containing composite material; an insulating ceramic plate mounted on said base; an intermediate layer that comprises the aforementioned composite material and is mounted on the insulating ceramic plate; a wiring layer formed on the intermediate layer; and a semiconductor element joined to the wiring layer with a joining material interposed therebetween. The insulating ceramic plate and the base are joined together by a metal that also forms the wiring layer, as are the insulating ceramic plate and the intermediate layer.
(FR)
L'invention fournit une structure de module de puissance, et un procédé de fabrication de celle-ci permettant une réduction de la contrainte thermique et une amélioration du rendement de dissipation de chaleur d'un module de puissance, à l'aide d'un matériau composite à faible dilatation thermique et dissipation de chaleur élevée. Le module de puissance de l'invention possède : une partie base configurée à l'aide du matériau composite qui comprend un carbone ; une plaque isolante en céramique montée sur la partie base ; une couche intermédiaire montée sur la plaque isolante en céramique, et configurée à l'aide dudit matériau composite ; une couche de câblage formée sur la couche intermédiaire ; et un élément semi-conducteur en contact avec la couche de câblage via un matériau de liaison. Ladite plaque isolante en céramique avec ladite partie base, et ladite plaque isolante en céramique avec ladite couche intermédiaire, sont chacune liées par un métal de formation de ladite couche de câblage.
(JA)
 本発明は低熱膨張で高放熱な複合材料を用いて、パワーモジュールの熱応力低減しつつ放熱効率を向上できるパワーモジュール構造とその製造方法の提供することにある。 本発明にかかるパワーモジュールは、炭素を含有する複合材料により構成されるベース部と、当該ベース部に搭載されるセラミックス絶縁板と、当該セラミックス絶縁板に搭載され、前記複合材料で構成される中間層と、当該中間層に形成される配線層と、当該配線層に接合材料を介して接合される半導体素子と、を有し、前記セラミックス絶縁板と前記ベース部、及び前記セラミックス絶縁板と前記中間層は、それぞれ前記配線層を形成する金属で接合される。
Also published as
Latest bibliographic data on file with the International Bureau