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1. WO2014168578 - WAFER BONDING TOTAL THICKNESS VARIATION IMPROVEMENT BY CONTOUR CONFINEMENT METHOD

Publication Number WO/2014/168578
Publication Date 16.10.2014
International Application No. PCT/SG2013/000143
International Filing Date 10.04.2013
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68327used during dicing or grinding
H01L 2221/6834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
6834used to protect an active side of a device or wafer
Applicants
  • APPLIED MATERIALS SOUTH EAST ASIA PTE. LTD. [SG]/[SG]
Inventors
  • WONG, Loke, Yuen
  • TOH, Chin, Hock
Agents
  • DREW & NAPIER LLC
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) WAFER BONDING TOTAL THICKNESS VARIATION IMPROVEMENT BY CONTOUR CONFINEMENT METHOD
(FR) PERFECTIONNEMENT APPORTÉ À LA VARIATION D'ÉPAISSEUR TOTALE D'UNE LIAISON DE TRANCHES AU MOYEN D'UN PROCÉDÉ DE CONFINEMENT DE CONTOUR
Abstract
(EN)
This relates to a method and apparatus for the bonding of wafers used in the fabrication of integrated circuits. The method of bonding a wafer to a wafer carrier includes the steps of providing a wafer; providing a wafer carrier; applying an adhesive to the wafer and/or the wafer carrier; increasing the viscosity of the adhesive to minimize it from 'running' when the two wafers are brought in contact to each other. In addition the apparatus employed in the method will comprise a housing; an electromagnetic radiation emitter fitted to the housing and adapted to increase the viscosity of an adhesive located on a wafer or a wafer carrier supported on a chuck by driving off solvent or partially cross-linking the adhesive; and an actuator operatively connected to the emitter to actuate the emitter.
(FR)
L'invention concerne un procédé et un appareil permettant de lier des tranches utilisées dans la fabrication de circuits intégrés. Le procédé permettant de lier une tranche à un support de tranche comprend les étapes consistant à fournir une tranche ; à fournir un support de tranche ; à appliquer un adhésif sur la tranche et/ou le support de tranche ; à augmenter la viscosité de l'adhésif pour minimiser l'effet de « fuite » lorsque les deux tranches sont mises en contact l'une avec l'autre. De plus, l'appareil employé dans le procédé comprend un logement ; un émetteur à rayonnement électromagnétique fixé sur le logement et conçu pour augmenter la viscosité d'un adhésif situé sur une tranche ou un support de tranche supporté sur support individuel de tranche en chassant un solvant ou en réticulant partiellement l'adhésif ; et un actionneur fonctionnellement connecté à l'émetteur pour actionner l'émetteur.
Latest bibliographic data on file with the International Bureau