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1. WO2014168116 - CORE HOLDER FOR SILICON PRODUCTION

Publication Number WO/2014/168116
Publication Date 16.10.2014
International Application No. PCT/JP2014/060101
International Filing Date 07.04.2014
IPC
C01B 33/035 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
CPC
C01B 33/035
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Applicants
  • 株式会社トクヤマ TOKUYAMA CORPORATION [JP]/[JP]
Inventors
  • 相本 恭正 AIMOTO, Yasumasa
  • 井村 哲也 IMURA, Tetsuya
  • 石田 晴之 ISHIDA, Haruyuki
Agents
  • 前田・鈴木国際特許業務法人 MAEDA & SUZUKI
Priority Data
2013-08188110.04.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CORE HOLDER FOR SILICON PRODUCTION
(FR) SUPPORT D'ÂME POUR FABRICATION DE SILICIUM
(JA) シリコン製造用芯線ホルダ
Abstract
(EN)
[Problem] To provide a core holder that makes it possible to: promote growth in the diameter of the lower part of a silicon rod, which occurs while the silicon rod is obtained by vapor phase growth of silicon on a silicon core and the grown silicon rod is recovered; and effectively reduce rod collapse during growth. [Solution] A core holder (3) which is mounted on the bottom panel of a silicon production device in which the Siemens method is used and which holds and energizes the silicon core, wherein the core holder (3) has a silicon core insertion hole (7) for holding the silicon core, and a heat conductive layer (8) formed from a material having greater heat conductivity than the material forming a base material (9) constituting the core holder is formed in a range including the outer edge part and extending in the outer circumference direction from the edge of the silicon core insertion hole (7).
(FR)
L'invention fournit un support d'âme permettant d'effectuer une épitaxie en phase vapeur d'un silicium dans une âme en silicium, de favoriser la croissance radiale de la partie inférieure d'une tige de silicium apparaissant avant la récupération de la tige de silicium après croissance, et de réduire efficacement l'affaissement de la tige pendant la croissance. Plus précisément, l'invention concerne un support d'âme (3) qui est installé au fond d'un dispositif de fabrication de silicium par un processus de Siemens, et qui est destiné à soutenir l'âme en silicium et à effectuer une distribution d'énergie vers cette dernière. Ce support d'âme (3) possède un orifice d'insertion d'âme en silicium (7) destiné à soutenir ladite âme en silicium. Une couche de conduction thermique (8) est formée à l'aide d'une matière de conductivité thermique supérieure à celle de la matière d'un matériau de base (9) configurant le support d'âme, dans une étendue incluant une partie bord externe se prolongeant du bord de l'orifice d'insertion d'âme en silicium (7) dans une direction périphérie externe.
(JA)
【課題】 シリコン芯線にシリコンを気相成長させ、成長したシリコンロッドを回収するまでの間に発生するシリコンロッドの下部の径成長を促し、成長時のロッドの倒壊を効果的に低減することが可能な芯線ホルダを提供する。 【解決手段】 ジーメンス法によるシリコン製造装置の底盤に取り付けられ、シリコン芯線の保持とシリコン芯線への通電を行うための芯線ホルダ3であって、上記シリコン芯線を保持するためのシリコン芯線挿入穴7を有し、該シリコン芯線挿入穴7の縁から外周方向に延在する外縁部を含む範囲に、芯線ホルダを構成する基材9の材質より熱伝導率が大きい材質により構成された熱伝導層8を形成した。
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