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1. WO2014167788 - SILICA VESSEL FOR PULLING UP SINGLE CRYSTAL SILICON AND PROCESS FOR PRODUCING SAME

Publication Number WO/2014/167788
Publication Date 16.10.2014
International Application No. PCT/JP2014/001681
International Filing Date 25.03.2014
IPC
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C03B 20/00 2006.01
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL
20Processes specially adapted for the production of quartz or fused silica articles
C30B 15/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
CPC
C03B 19/095
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
19Other methods of shaping glass
09by fusing powdered glass in a shaping mould
095by centrifuging, e.g. arc discharge in rotating mould
C03B 2201/03
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
2201Type of glass produced
02Pure silica glass, e.g. pure fused quartz
03Impurity concentration specified
C03B 2201/04
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
2201Type of glass produced
02Pure silica glass, e.g. pure fused quartz
03Impurity concentration specified
04Hydroxyl ion (OH)
C30B 15/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
10Crucibles or containers for supporting the melt
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 35/002
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
35Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
002Crucibles or containers
Applicants
  • 信越石英株式会社 SHIN-ETSU QUARTZ PRODUCTS CO., LTD. [JP]/[JP]
Inventors
  • 山形 茂 YAMAGATA, Shigeru
Agents
  • 好宮 幹夫 YOSHIMIYA, Mikio
Priority Data
2013-08081208.04.2013JP
2013-08513015.04.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICA VESSEL FOR PULLING UP SINGLE CRYSTAL SILICON AND PROCESS FOR PRODUCING SAME
(FR) CUVE DE SILICE PERMETTANT DE REMONTER DU SILICIUM MONOCRISTALLIN ET SON PROCÉDÉ DE PRODUCTION
(JA) 単結晶シリコン引き上げ用シリカ容器及びその製造方法
Abstract
(EN)
A silica vessel which is to be used for pulling up single crystal silicon and which has a straight barrel section, a bent section and a bottom section, wherein: the outside portion of the vessel is made of an opaque silica glass that contains bubbles; the inside portion thereof is made of a transparent silica glass; and a mixed silica layer in which both a phase formed from a crystalline silica powder through melting and a phase formed from a non-crystalline silica powder through melting are mixed in a particulate state is present in at least the inner surface portion of the straight barrel section. Thus, provided is a silica vessel which is to be used for pulling up single crystal silicon and in which molten silicon can be inhibited from vibrating at the surface at high temperature.
(FR)
L'invention concerne une cuve de silice qui est utilisée pour remonter du silicium monocristallin et qui comprend une section de fût droite, une section courbée et une section de fond. La partie extérieure de la cuve est faite d'un verre de silice opaque qui contient des bulles ; sa partie intérieure est faite d'un verre de silice transparent ; et une couche de silice mixte dans laquelle une phase formée de poudre de silice cristalline par fusion et une phase formée d'une poudre de silice non cristalline par fusion sont toutes deux mélangées dans un état particulaire est présente dans au moins la partie de surface interne de la section de fût droite. Ainsi, il est proposé une cuve de silice qui est utilisée pour remonter du silicium monocristallin et dans laquelle il est possible d'empêcher du silicium fondu de vibrer à la surface à haute température.
(JA)
 本発明は、直胴部、湾曲部、及び底部を有する単結晶シリコン引き上げ用シリカ容器であって、容器外側が気泡を含有する不透明シリカガラスから成り、容器内側が透明シリカガラスから成り、少なくとも前記直胴部の内側表層部分において、結晶質シリカ粉が溶融した相と非晶質シリカ粉が溶融した相が粒状に混在する混合シリカ層を有する単結晶シリコン引き上げ用シリカ容器である。これにより、高温度下におけるシリカ容器中のシリコン融液の湯面振動を抑制できる単結晶シリコン引き上げ用シリカ容器が提供される。
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