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1. WO2014167693 - PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Publication Number WO/2014/167693
Publication Date 16.10.2014
International Application No. PCT/JP2013/060967
International Filing Date 11.04.2013
IPC
G01R 31/26 2014.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
CPC
G01R 1/0466
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
04Housings; Supporting members; Arrangements of terminals
0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
0433Sockets for IC's or transistors
0441Details
0466concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
G01R 1/0483
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
04Housings; Supporting members; Arrangements of terminals
0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
0433Sockets for IC's or transistors
0483Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
G01R 1/06738
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
06Measuring leads; Measuring probes
067Measuring probes
06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
06733Geometry aspects
06738related to tip portion
G01R 31/2874
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
2851Testing of integrated circuits [IC]
2855Environmental, reliability or burn-in testing
2872related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
2874related to temperature
G01R 31/40
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
40Testing power supplies
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Applicants
  • ルネサスエレクトロニクス株式会社 RENESAS ELECTRONICS CORPORATION [JP]/[JP]
Inventors
  • 石井 稔二 ISHII, Toshitsugu
  • 槇平 尚宏 MAKIHIRA, Naohiro
  • 岩崎 秀和 IWASAKI, Hidekazu
  • 松橋 潤 MATSUHASHI, Jun
Agents
  • 筒井 大和 TSUTSUI, Yamato
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置の製造方法
Abstract
(EN)
The purpose of the present invention is to improve semiconductor yield, and to extend the life of a socket terminal. A distal end part (PU) of a socket terminal (STE1) is provided with a protruding part (PJ1) and a protruding part (PJ2). In so doing, contact between, for example, the socket terminal (STE1) and a lead through which a large current flows can take place at two points, through contact afforded by the protruding part (PJ1) and contact afforded by the protruding part (PJ2). As a result, the flow of electrical current flowing from the socket terminal (STE1) to the lead is dispersed onto a path flowing through the protruding part (PJ1) and a path flowing through the protruding part (PJ2). Consequently, rise in temperature of the contacting portions of the socket terminal (STE1) and the lead can be kept to a minimum, even in instances of large current flow between the socket terminal (STE1) and the lead.
(FR)
La présente invention consiste à améliorer le rendement de semi-conducteurs et à prolonger la durée de vie d'une douille de prise. Une partie d'extrémité distale (PU) d'une douille de prise (STE1) est munie d'une partie saillante (PJ1) et d'une partie saillante (PJ2). En procédant ainsi, le contact entre, par exemple, la douille de prise (STE1) et un conducteur à travers lequel une circulation de courant élevée peut avoir lieu au niveau de deux points, par l'intermédiaire d'un contact assuré par la partie saillante (PJ1) et d'un contact assuré par la partie saillante (PJ2). Par conséquent, la circulation de courant électrique, qui circule en provenance de la douille de prise (STE1) vers le conducteur, est dispersée sur un trajet passant à travers la partie saillante (PJ1) et un trajet passant à travers la partie saillante (PJ2). Par conséquent, une augmentation de la température des parties de mise en contact de la douille de prise (STE1) et du conducteur peut être maintenue à un minimum, même dans les cas d'une circulation de courant élevée entre la douille de prise (STE1) et le conducteur.
(JA)
 半導体装置の歩留り向上を図る。また、ソケット端子の長寿命化を図る。ソケット端子STE1の先端部PUに、突起部PJ1および突起部PJ2を設ける。これにより、例えば、大電流を流すリードとソケット端子STE1との接触を、突起部PJ1による接触と、突起部PJ2による接触との2点で行なうことができる。この結果、ソケット端子STE1からリードへ流れる電流は、突起部PJ1を流れる経路と、突起部PJ2を流れる経路に分散して流れることになる。したがって、ソケット端子STE1とリードとの間に大電流を流す場合であっても、ソケット端子STE1とリードとの間の接触部の温度上昇を抑制することができる。
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