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1. WO2014166707 - PRODUCTION METHOD OF A SENSOR CHIP AND COMPUTERIZED TOMOGRAPHY DETECTOR

Publication Number WO/2014/166707
Publication Date 16.10.2014
International Application No. PCT/EP2014/055378
International Filing Date 18.03.2014
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
G01T 1/24
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/14659
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14658X-ray, gamma-ray or corpuscular radiation imagers
14659Direct radiation imagers structures
H01L 27/1469
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
1469Assemblies, i.e. hybrid integration
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE]/[DE]
Inventors
  • EICHENSEER, Mario
  • REICHEL, Thomas
Priority Data
10 2013 206 407.111.04.2013DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HERSTELLUNGSVERFAHREN EINES SENSORCHIPS SOWIE COMPUTERTOMOGRAPHISCHER DETEKTOR
(EN) PRODUCTION METHOD OF A SENSOR CHIP AND COMPUTERIZED TOMOGRAPHY DETECTOR
(FR) PROCÉDÉ DE FABRICATION D'UNE PUCE DE DÉTECTION ET DÉTECTEUR TOMODENSITOMÉTRIQUE
Abstract
(DE)
Die Erfindung betrifft einen Sensorchip, insbesondere für computertomographische Detektoren, aufweisend einen mit einem Strahlung detektierenden Element (2) elektrisch verbundenen Analog-Digital-Wandler (10) und eine kristalline Grundplatte (1). Ausgehend von der Aufgabe die Robustheit, die Lebensdauer und den Kostenaufwand derartiger Sensorchips zu verbessern konnten vorteilhafte Lösungen gefunden werden, wobei Bestandteile des Strahlung detektierenden Elementes (2) auf einer Detektorseite (12) der kristallinen Grundplatte (1) und Bestandteile des Analog-Digital-Wandlers (10) auf einer zweiten Seite (13) der kristallinen Grundplatte (1) lithographisch integriert sind. Daran ist vorteilhaft, dass ein aufwändiges Wafer-Bonding-Verfahren vermieden werden kann und umständliche Kontaktierungszuordnungen zwischen Strahlung detektierendem Element (2) und Analog-Digital-Wandler (10) mittels Halbleitertechnologie erheblich vereinfacht werden können.
(EN)
The invention relates to a sensor chip, in particular for computerized tomography detectors, having an analog-digital converter (10) electrically connected to an element (2) detecting radiation, and a crystalline base plate (1). The invention addresses the problem In order to solve the problem of improving the robustness, service life and expense of such sensor chips, advantageous solutions are found according to the invention, wherein components of the radiation-detecting element (2) are lithographically integrated on a detector side (12) of the crystalline base plate (1) and components of the analog-digital converter (10) are lithographically integrated on a second side (13) of the crystalline base plate (1). It is advantageous that an expensive wafer-bonding process can be avoided and cumbersome contacting assignments between the radiation-detecting element (2) and the analog-digital converter (10) can be significantly simplified by means of semiconductor technology.
(FR)
L'invention concerne une puce de détection, destinée en particulier à des détecteurs tomodensitométriques, présentant un convertisseur analogique-numérique (10) relié électriquement à un élément (2) détectant un rayonnement et une plaque de base cristalline (1). L'objectif de l'invention est d'améliorer ce type de puce de détection en termes de robustesse, de durée de vie et de coût. À cet effet, de manière avantageuse, des composants de l'élément (2) détectant un rayonnement sont intégrés par lithographie sur un côté de détection (12) de la plaque de base cristalline (1) et des composants du convertisseur analogique-numérique (10) sur un deuxième côté (13) de la plaque de base cristalline (1). L'invention permet ainsi d'éviter de manière avantageuse un procédé onéreux de connexion sur plaquette et de simplifier considérablement l'affectation complexe des contacts entre l'élément (2) détectant un rayonnement et le convertisseur analogique-numérique (10) au moyen de la technologie des semi-conducteurs.
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