Processing

Please wait...

Settings

Settings

Goto Application

1. WO2014164441 - METHOD OF IMPROVING ION BEAM QUALITY IN AN IMPLANT SYSTEM

Publication Number WO/2014/164441
Publication Date 09.10.2014
International Application No. PCT/US2014/022430
International Filing Date 10.03.2014
IPC
H01L 21/265 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
CPC
H01J 2237/006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece,
H01J 37/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
08Ion sources; Ion guns
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
Applicants
  • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US]/[US]
Inventors
  • KOO, Bon-Woong
  • LEAVITT, Christopher J.
  • KURUNCZI, Peter F.
  • MILLER, Timothy J.
  • RADOVANOV, Svetlana B.
Agents
  • DAISAK, Daniel N.
Priority Data
13/796,63912.03.2013US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF IMPROVING ION BEAM QUALITY IN AN IMPLANT SYSTEM
(FR) PROCÉDÉ D'AMÉLIORATION DE QUALITÉ DE FAISCEAU IONIQUE DANS UN SYSTÈME IMPLANT
Abstract
(EN)
A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.
(FR)
La présente invention concerne un système pour améliorer la qualité de faisceau ionique. Selon un mode de réalisation, le système comprend une source d'ions, qui comporte une chambre définie par une pluralité de parois de chambre ; une antenne RF disposée sur une première paroi de la pluralité de parois de chambre ; une seconde paroi, opposée à la première paroi, la distance entre la première paroi et la seconde paroi définissant la hauteur de la chambre ; une ouverture disposée sur une de la pluralité de parois de chambre ; une première entrée de gaz pour introduire un premier gaz source dans la chambre ; et une seconde entrée de gaz pour introduire un second gaz source, différent du premier gaz source, dans la chambre. Une première distance de la première entrée de gaz à la seconde paroi est inférieure à 35 % de la hauteur ; et une seconde distance de la seconde entrée de gaz à la première paroi est inférieure à 35 % de la hauteur.
Also published as
Latest bibliographic data on file with the International Bureau