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1. WO2014161738 - OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC MODULE

Publication Number WO/2014/161738
Publication Date 09.10.2014
International Application No. PCT/EP2014/055835
International Filing Date 24.03.2014
IPC
H01L 25/04 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
H01L 31/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 31/0224 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
H01L 25/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
041the devices being of a type provided for in group H01L31/00
042the devices being arranged next to each other
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 31/02002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
02002Arrangements for conducting electric current to or from the device in operations
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • HAHN, Berthold
  • BAUR, Johannes
Agents
  • ZUSAMMENSCHLUSS NR. 175, EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2013 103 409.805.04.2013DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP UND OPTOELEKTRONISCHES MODUL
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC MODULE
(FR) PUCE DE SEMI-CONDUCTEUR OPTOÉLECTRONIQUE ET MODULE OPTOÉLECTRONIQUE
Abstract
(DE)
Es wird ein optoelektronischer Halbleiterchip (1) angegeben, der einen Träger (5) und einen auf dem Träger (5) angeordneten Halbleiterkörper (2) mit einer Halbleiterschichtenfolge aufweist, wobei - die Halbleiterschichtenfolge einen aktiven Bereich (20) umfasst, der zwischen einer ersten Halbleiterschicht (21) und einer zweiten Halbleiterschicht (22) angeordnet ist und zur Erzeugung oder zum Empfangen von Strahlung vorgesehen ist; - die erste Halbleiterschicht (21) elektrisch leitend mit einem ersten Kontakt (41) und mit einem zweiten Kontakt (42) verbunden ist; - der erste Kontakt auf einer dem Halbleiterkörper zugewandten Vorderseite (51) des Trägers ausgebildet ist; - der zweite Kontakt auf einer vom Halbleiterkörper abgewandten Rückseite (52) des Trägers ausgebildet ist; und - der erste Kontakt und der zweite Kontakt elektrisch leitend miteinander verbunden sind. Weiterhin wird ein optoelektronisches Modul (10) angegeben. der erste Kontakt auf einer dem Halbleiterkörper zugewandten Vorderseite (51) des Trägers ausgebildet ist;-der zweite Kontakt auf einer vom Halbleiterkörper abgewandten Rückseite (52) des Trägers ausgebildet ist; und -der erste Kontakt und der zweite Kontakt elektrisch leitendm iteinander verbunden sind. Weiterhin wird ein optoelektronisches Modul (10) angegeben.
(EN)
The invention relates to an optoelectronics semiconductor chip (1) which has a substrate (5) and a semiconductor body (2) arranged on the substrate (5) and having a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an active region (20), which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22) and is provided to generate or to receive radiation; the first semiconductor layer (21) is electrically conductively connected to a first contact (41) and to a second contact (42); the first contact is formed on a front side (51) of the substrate, facing the semiconductor body; the second contact is formed on a rear side (52) of the substrate, facing away from the semiconductor body; and the first contact and the second contact are electrically conductively connected to each other. The invention further relates to an optoelectronic module (10).
(FR)
L'invention concerne une puce de semi-conducteur optoélectronique (1) comprenant un support (5) et un élément semi-conducteur (2), disposé sur le support (5), qui comporte une succession de couches semi-conductrices, dans laquelle - la succession de couches semi-conductrices comprend une zone active (20) qui est disposée entre une première couche semi-conductrice (21) et une deuxième couche semi-conductrice (22) et qui sert à générer ou recevoir un rayonnement ; - la première couche semi-conductrice (21) est reliée de manière électriquement conductrice à un premier contact (41) et à un deuxième contact (42) ; - le premier contact est formé sur une face avant (51) du support dirigée vers l'élément semi-conducteur ; - le deuxième contact est formé sur une face arrière (52) du support dirigée à l'opposé de l'élément semi-conducteur ; et - le premier et le deuxième contact sont reliés l'un à l'autre de manière électriquement conductrice. L'invention concerne en outre un module optoélectronique (10).
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