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1. WO2014157121 - PROBE DEVICE

Publication Number WO/2014/157121
Publication Date 02.10.2014
International Application No. PCT/JP2014/058150
International Filing Date 18.03.2014
Chapter 2 Demand Filed 16.01.2015
IPC
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01R 1/07314
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
06Measuring leads; Measuring probes
067Measuring probes
073Multiple probes
07307with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
07314the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
G01R 1/07342
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
06Measuring leads; Measuring probes
067Measuring probes
073Multiple probes
07307with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
07342the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
G01R 1/07378
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
02General constructional details
06Measuring leads; Measuring probes
067Measuring probes
073Multiple probes
07307with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
07364with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
07378using an intermediate adapter, e.g. space transformers
G01R 3/00
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
3Apparatus or processes specially adapted for the manufacture ; or maintenance; of measuring instruments ; , e.g. of probe tips
G01R 31/26
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
G01R 31/2886
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
28Testing of electronic circuits, e.g. by signal tracer
2851Testing of integrated circuits [IC]
2886Features relating to contacting the IC under test, e.g. probe heads; chucks
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 篠原 榮一 SHINOHARA, Eiichi
  • 長坂 旨俊 NAGASAKA, Munetoshi
  • 田岡 健 TAOKA, Ken
  • 加藤 儀保 KATO, Yoshiyasu
Agents
  • 別役 重尚 BECCHAKU, Shigehisa
Priority Data
2013-06781128.03.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROBE DEVICE
(FR) DISPOSITIF DE SONDE
(JA) プローブ装置
Abstract
(EN)
Provided is a probe device that has a shorter electrical path than existing probe devices, reducing electrical resistance and the like and allowing precise testing. Said probe device (100) is provided with the following: a conductive-film electrode (220) formed on the surface of a placement platform (111) on which a semiconductor wafer (W) is placed; an electrode plate (221) positioned above said placement platform (111); and contact probes (222) positioned on the sides of the placement platform (111). Each of said contact probes (222) has the following, forming a single unit: an abutting part (222a), the top surface of which is textured; and a cable connection part (222b), beneath the abutting part (222a), to which a cable (225) that is electrically connected to the conductive-film electrode (220) is connected. When the placement platform (111) is raised so as to make a probe (211) on a probe card (210) contact an electrode on a semiconductor device on the semiconductor wafer (W), the abovementioned abutting parts (222a) abut against the electrode plate (221) due to biasing members positioned beneath the cable connection parts (222b).
(FR)
L'invention porte sur un dispositif de sonde qui possède un chemin électrique plus court que des dispositifs de sonde existants, réduisant la résistance électrique et analogue et permettant un test précis. Ledit dispositif de sonde (100) comporte les éléments suivants : une électrode de film conducteur (220) formée sur la surface d'une plateforme de placement (111) sur laquelle une tranche de semi-conducteur (W) est placée; une plaque d'électrode (221) positionnée au-dessus de ladite plateforme de placement (111); et des sondes de contact (222) positionnées sur les côtés de la plateforme de placement (111). Chacune desdites sondes de contact (222) possède les éléments suivants, formant une unité unique : une partie contiguë (222a), la surface supérieure de celle-ci étant texturée; et une partie de connexion de câble (222b), sous la partie contiguë (222a), à laquelle un câble (225) qui est connecté électriquement à l'électrode de film conducteur (220) est connecté. Lorsque la plateforme de placement (111) est élevée afin de mettre en contact une sonde (211) sur une carte de sonde (210) avec une électrode sur un dispositif de semi-conducteur sur la tranche de semi-conducteur (W), les parties contiguës susmentionnées (222a) sont contiguës à la plaque d'électrode (221) en raison des éléments de sollicitation positionnés sous les parties de connexion de câble (222b).
(JA)
 従来に比べてプローブ装置における電気的な経路を短くすることができ、電気的な抵抗等を減少させて、精度良く検査を実施することのできるプローブ装置を提供する。プローブ装置100は、載置台111における半導体ウエハWの載置面に形成された導体膜電極220と、載置台111の上方に配設された電極板221と、載置台111の側方に配設されたコンタクトプローブ222とを備え、該コンタクトプローブ222は、上面に凹凸が形成された当接部222aと、当接部222aの下方に当接部222aと一体に構成され、導体膜電極220と電気的に接続されたケーブル225が接続されるケーブル接続部222bとを有し、載置台111を上昇させて半導体ウエハWの半導体デバイスの電極にプローブカード210のプローブ211を接触させた際に、ケーブル接続部222bの下方に配設された付勢部材によって当接部222aと電極板221とが当接する。
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