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1. WO2014156837 - HOLLOW SEALING RESIN SHEET AND PRODUCTION METHOD FOR HOLLOW PACKAGE

Publication Number WO/2014/156837
Publication Date 02.10.2014
International Application No. PCT/JP2014/057339
International Filing Date 18.03.2014
IPC
H01L 23/29 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
C08J 5/18 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H142
5Manufacture of articles or shaped materials containing macromolecular substances
18Manufacture of films or sheets
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
H01L 23/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
06characterised by the material of the container or its electrical properties
08the material being an electrical insulator, e.g. glass
H01L 23/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
CPC
H01L 21/561
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
561Batch processing
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/16245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16245the item being metallic
H01L 2224/97
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
93Batch processes
95at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
97the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
H01L 23/295
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
293Organic, e.g. plastic
295containing a filler
H01L 23/3107
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
3107the device being completely enclosed
Applicants
  • 日東電工株式会社 NITTO DENKO CORPORATION [JP]/[JP]
Inventors
  • 豊田 英志 TOYODA, Eiji
  • 清水 祐作 SHIMIZU, Yusaku
  • 千歳 裕之 SENZAI, Hiroyuki
Agents
  • 特許業務法人 ユニアス国際特許事務所 UNIUS PATENT ATTORNEYS OFFICE
Priority Data
2013-06992628.03.2013JP
2014-02231307.02.2014JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) HOLLOW SEALING RESIN SHEET AND PRODUCTION METHOD FOR HOLLOW PACKAGE
(FR) FEUILLE DE RÉSINE DE SCELLAGE CREUSE ET PROCÉDÉ DE FABRICATION DE CONDITIONNEMENT CREUX
(JA) 中空封止用樹脂シート及び中空パッケージの製造方法
Abstract
(EN)
Provided are a hollow sealing resin sheet which is capable of maintaining a hollow structure even if the width of the void in the hollow structure is approximately 100 μm and is capable of preparing a hollow package having high reliability by preventing warping of the package, and a production method for a hollow package. This hollow sealing resin sheet includes an inorganic filler in an amount of 70 vol% to 90 vol% inclusive, and has a minimum melt viscosity measured by dynamic mechanical analysis at 60-130°C of 2000 Pa·s to 20000 Pa·s inclusive, a storage modulus at 20°C of 1 GPa to 20 GPa inclusive following heat curing for one hour at 150°C, and a linear expansion coefficient at or below the glass transition temperature of 5 ppm/K to 15 ppm/K inclusive following heat curing for one hour at 150°C.
(FR)
L'invention concerne une feuille de résine de scellage creuse qui est apte à maintenir une structure creuse même si la largeur de la cavité dans la structure creuse est d'approximativement 100 µm et qui est apte à préparer un conditionnement creux ayant une fiabilité élevée en évitant une déformation du conditionnement, et un procédé de fabrication d'un conditionnement creux. Cette feuille de résine de scellage creuse comprend une charge inorganique dans une quantité de 70 % en volume à 90 % en volume, inclus, et possède une viscosité de fusion minimale mesurée par analyse mécanique dynamique entre 60 et 130°C de 2 000 Pa.s à 20 000 Pa.s, inclus, un module de stockage à 20°C de 1 GPa à 20 GPa, inclus, après durcissement thermique pendant une heure à 150°C, et un coefficient de dilatation linéaire à ou au-dessous de la température de transition vitreuse de 5 ppm/K à 15 ppm/K, inclus, après durcissement thermique pendant une heure à 150°C.
(JA)
 中空構造の空隙の幅が100μm程度であっても中空構造を維持可能であるとともに、パッケージの反りを防止して信頼性の高い中空パッケージを作製可能な中空封止用樹脂シート及び中空パッケージの製造方法を提供する。本発明の中空封止用樹脂シートは、無機充填剤を70体積%以上90体積%以下の含有量で含み、動的粘弾性測定による60~130℃での最低溶融粘度が2000Pa・s以上20000Pa・s以下であり、150℃で1時間熱硬化させた後の20℃における貯蔵弾性率が1GPa以上20GPa以下であり、150℃で1時間熱硬化させた後のガラス転移温度以下における線膨張係数が5ppm/K以上15ppm/K以下である。
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