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1. WO2014153597 - A METHOD OF ANODISING A SURFACE OF A SEMICONDUCTOR DEVICE

Publication Number WO/2014/153597
Publication Date 02.10.2014
International Application No. PCT/AU2014/000307
International Filing Date 24.03.2014
IPC
C25D 11/06 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
06characterised by the electrolytes used
C25D 11/12 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
12Anodising more than once, e.g. in different baths
C25D 17/06 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
17Constructional parts, or assemblies thereof, of cells for electrolytic coating
06Suspending or supporting devices for articles to be coated
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
C25D 11/005
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
005Apparatus specially adapted for electrolytic conversion coating
C25D 11/022
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
022Anodisation on selected surface areas
C25D 11/06
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
06characterised by the electrolytes used
C25D 11/32
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
32of semiconducting materials
C25D 17/06
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
17Constructional parts, or assemblies thereof, of cells for electrolytic coating
06Suspending or supporting devices for articles to be coated
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
Applicants
  • NEWSOUTH INNOVATIONS PTY LIMITED [AU]/[AU]
Inventors
  • CUI, Jie
  • WANG, Xi
Agents
  • GRIFFITH HACK
Priority Data
201390103125.03.2013AU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD OF ANODISING A SURFACE OF A SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ D'ANODISATION D'UNE SURFACE D'UN DISPOSITIF SEMI-CONDUCTEUR
Abstract
(EN)
The present disclosure provides a method of anodising a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodising the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodises.
(FR)
La présente invention concerne un procédé d'anodisation d'une surface d'un dispositif semi-conducteur comprenant une jonction p-n. Le procédé comprend les étapes consistant à : exposer une première partie de surface du dispositif semi-conducteur à une solution électrolytique appropriée pour une anodisation de la première partie de surface quand un courant électrique est dirigé à travers une région au niveau de la première partie de surface, et ; exposer une partie du dispositif semi-conducteur à un rayonnement électromagnétique d'une manière telle que le rayonnement électromagnétique induit le courant électrique et que la première partie de surface subit une anodisation.
Also published as
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