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1. WO2014131016 - METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS

Publication Number WO/2014/131016
Publication Date 28.08.2014
International Application No. PCT/US2014/018344
International Filing Date 25.02.2014
IPC
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
CPC
G01N 2021/151
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
01Arrangements or apparatus for facilitating the optical investigation
15Preventing contamination of the components of the optical system or obstruction of the light path
151Gas blown
G01N 21/15
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
01Arrangements or apparatus for facilitating the optical investigation
15Preventing contamination of the components of the optical system or obstruction of the light path
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G03F 7/705
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
G03F 7/70933
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution, removing pollutants from apparatus; electromagnetic and electrostatic-charge pollution
70933Purge
Applicants
  • KLA-TENCOR CORPORATION [US]/[US]
  • SANDIA CORPORATION [US]/[US]
Inventors
  • DELGADO, Gildardo
  • JOHNSON, Terry
  • ARIENTI, Marco
  • HARB, Salam
  • KLEBANOFF, Lennie
  • GARCIA, Rudy
  • TAHMASSEBPUR, Mohammed
  • SCOTT, Sarah
Agents
  • SIMPSON, Robert, P.
Priority Data
61/768,89825.02.2013US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND SYSTEM FOR GAS FLOW MITIGATION OF MOLECULAR CONTAMINATION OF OPTICS
(FR) PROCÉDÉ ET SYSTÈME POUR L'ATTÉNUATION DE L'ÉCOULEMENT DE GAZ DE CONTAMINATION MOLÉCULAIRE D'OPTIQUES
Abstract
(EN) A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.
(FR) L'invention concerne un procédé implémenté par ordinateur permettant de déterminer un écoulement de gaz de purge optimisé dans un appareil de métrologie d'inspection ou de lithographie de semi-conducteurs, consistant à recevoir une fraction molaire de contaminant permissible, un débit d'évacuation de contaminant associé à un contaminant, une diffusivité de masse de contaminant, une longueur de surface d'évacuation, une pression, une température, une hauteur de canal et un poids moléculaire d'un gaz de purge, à calculer un facteur d'écoulement sur la base de la fraction molaire de contaminant permissible, du débit d'évacuation de contaminant, de la hauteur de canal et de la longueur de surface d'évacuation, à comparer le facteur d'écoulement à une valeur de facteur d'écoulement maximale prédéfinie, à calculer une vélocité de gaz de purge et un débit massique de gaz de purge minimaux à partir du facteur d'écoulement, de la diffusivité de masse de contaminant, de la pression, de la température, et du poids moléculaire du gaz de purge, et à introduire le gaz de purge dans l'appareil de métrologie d'inspection ou de lithographie de semi-conducteurs avec la vélocité de gaz de purge et le débit de gaz de purge minimaux.
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