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1. (WO2014130931) STRAIN RELIEF STRUCTURES FOR STRETCHABLE INTERCONNECTS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2014/130931 International Application No.: PCT/US2014/017975
Publication Date: 28.08.2014 International Filing Date: 24.02.2014
IPC:
H05K 1/02 (2006.01) ,H01L 29/06 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants:
MC10, INC. [US/US]; 10 Maguire Road, Building 3 Lexington, MA 02421, US
Inventors:
HSU, Yung-Yu; US
Agent:
KITCH, Paul; Nixon Peabody LLP 300 S. Riverside Plaza, 16th Floor Chicago,Illinois 60606, US
Priority Data:
13/843,88015.03.2013US
61/768,93925.02.2013US
Title (EN) STRAIN RELIEF STRUCTURES FOR STRETCHABLE INTERCONNECTS
(FR) ISTRUCTURES DE RÉDUCTION DE CONTRAINTES POUR INTERCONNEXIONS EXTENSIBLES
Abstract:
(EN) Intersection structures are provided to reduce a strain in a conformable electronic system that includes multi-level arrangements of stretchable interconnect structures. Bypass regions are formed in areas of the stretchable interconnect structures that may ordinarily cross or pass each other. The bypass regions of the stretchable interconnects are disposed relative to each other such that the intersection structure encompasses at least a portion of the bypass regions of each stretchable interconnect structure. The intersection structure has elastic properties that relieve a mechanical strain on the bypass regions during stretching at least one of the stretchable interconnect structures.
(FR) L'invention concerne des structures d'intersection destinées à réduire une contrainte dans un système électronique adaptable comprenant des agencements à plusieurs niveaux de structures d'interconnexion extensibles. Des zones de dérivation sont formées dans des parties des structures d'interconnexion extensibles qui peuvent habituellement se couper ou se croiser. Les zones de dérivation des interconnexions extensibles sont disposées relativement les unes aux autres de telle sorte que la structure d'intersection comprend au moins une partie des zones de dérivation de chaque structure d'interconnexion extensible. La structure d'intersection présente des propriétés élastiques qui réduisent une contrainte mécanique exercée sur les zones de dérivation pendant l'extension d'au moins une des structures d'interconnexion extensibles.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)