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1. WO2014130164 - REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE

Publication Number WO/2014/130164
Publication Date 28.08.2014
International Application No. PCT/US2014/010340
International Filing Date 06.01.2014
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/02192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02192the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02433Crystal orientation
H01L 21/0245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
0245Silicon, silicon germanium, germanium
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/02488
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02488Insulating materials
Applicants
  • TRANSLUCENT, INC. [US]/[US]
Inventors
  • DARGIS, Rytis
  • SMITH, Robin
  • CLARK, Andrew
  • ARKUN, Erdem
  • LEBBY, Michael
Agents
  • PARSONS, Robert, A.
Priority Data
13/774,96222.02.2013US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
(FR) DIÉLECTRIQUE DE GRILLE À BASE D'OXYDE DE TERRES RARES (REO) POUR UN DISPOSITIF À BASE DE NITRURE DU GROUPE III (N-III) SUR UN SUBSTRAT DE SILICIUM (SI)
Abstract
(EN) A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
(FR) La présente invention se rapporte à un diélectrique de grille en oxyde de terres rares sur un matériau à base de nitrure du groupe III mis en croissance sur un substrat de silicium, ledit diélectrique comprenant un gabarit monocristallin de compensation des contraintes positionné sur un substrat de silicium. Le gabarit de compensation des contraintes est un réseau sensiblement cristallin adapté à la surface du substrat de silicium. Une structure à base de nitrure de gallium (GaN) est positionnée sur la surface du gabarit de compensation des contraintes et du réseau sensiblement cristallin adapté à ce dernier. Une couche active d'un matériau monocristallin à base de nitrure du groupe III est mise en croissance sur la structure à base de nitrure de gallium (GaN) et sur le réseau sensiblement cristallin adapté à cette dernière. Une couche diélectrique monocristalline à base d'oxyde de terres rares est mise en croissance sur la couche active du matériau à base de nitrure du groupe III.
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