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1. WO2014125681 - SUBSTRATE PROCESSING DEVICE

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Publication Number WO/2014/125681
Publication Date 21.08.2014
International Application No. PCT/JP2013/079715
International Filing Date 01.11.2013
IPC
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/306 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
B01D 19/0031
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
0031by filtration
B01D 35/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
35Other filtering devices; Auxiliary devices for filtration; Filter housing constructions
02Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks,
B08B 3/14
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
04Cleaning involving contact with liquid
10with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
14Removing waste, e.g. labels, from cleaning liquid; ; Regenerating cleaning liquids
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 21/67023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67023for general liquid treatment, e.g. etching followed by cleaning
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
Applicants
  • 株式会社ＳＣＲＥＥＮホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 石井　淳一 ISHII Junichi
  • 岡本　浩一 OKAMOTO Koichi
Agents
  • 吉竹　英俊 YOSHITAKE Hidetoshi
Priority Data
2013-02628214.02.2013JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置
front page image
Abstract
(EN) Provided is technology which, using a simple configuration, reduces the quantity of particles adhering to a substrate. A substrate processing device (10) is a device which discharges a processing liquid from a nozzle (11) so as to process a substrate (9). The substrate processing device (10) is provided with a supply pipe (30) and a bubble capture unit (F2). One end of the supply pipe (30), via a first filter (F1) which removes particles, is connected to a tank (21) of a processing liquid supply unit (20) which supplies the processing liquid, and the other end of the supply pipe (30) is connected to the nozzle (11). The bubble capture unit (F2) is interposed at a position between the first filter (F1) and the nozzle (11) on the supply pipe (30), and captures bubbles (Ba1) included in the processing liquid. Pressure loss (PL2) by way of the bubble capture unit (F2) is substantially the same or less than pressure loss (PL1) by way of the first filter (F1).
(FR) L'invention concerne une technologie qui, à l'aide d'une configuration simple, réduit la quantité de particules adhérant à un substrat. Un dispositif de traitement de substrat (10) est un dispositif qui décharge un liquide de traitement provenant d'une buse (11) de façon à traiter un substrat (9). Le dispositif de traitement de substrat (10) est pourvu d'un tuyau d'alimentation (30) et d'une unité de capture de bulles (F2). Une extrémité du tuyau d'alimentation (30), par l'intermédiaire d'un premier filtre (F1) qui retire des particules, est connectée à un réservoir (21) d'une unité d'alimentation en liquide de traitement (20) qui fournit le liquide de traitement, et l'autre extrémité du tuyau d'alimentation (30) est connectée à la buse (11). L'unité de capture de bulles (F2) est interposée à une position entre le premier filtre (F1) et la buse (11) sur le tuyau d'alimentation (30), et capture des bulles (Ba1) incluses dans le liquide de traitement. Une perte de pression (PL2) créée par l'unité de capture de bulles (F2) est sensiblement la même ou inférieure à une perte de pression (PL1) créée par le premier filtre (F1).
(JA) 簡単な構成で、基板に付着するパーティクルの量を低減する技術を提供する。基板処理装置（１０）は、処理液をノズル（１１）から吐出して基板（９）を処理する装置である。基板処理装置（１０）は、供給配管（３０）および気泡捕捉部（Ｆ２）を備えている。供給配管（３０）の一方端は、パーティクルを除去する第１フィルター（Ｆ１）を介して、処理液を供給する処理液供給部（２０）のタンク（２１）に接続されており、供給配管（３０）の他方端は、ノズル（１１）に接続されている。気泡捕捉部（Ｆ２）は、供給配管（３０）における、第１フィルター（Ｆ１）とノズル（１１）との間の位置に介挿されており、処理液中に含まれる気泡（Ｂａ１）を捕捉する。気泡捕捉部（Ｆ２）による圧力損失（ＰＬ２）は、前記第１フィルター（Ｆ１）による圧力損失（ＰＬ１）と略同じか、それよりも小さい。
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