Processing

Please wait...

Settings

Settings

Goto Application

1. WO2014123036 - SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR

Publication Number WO/2014/123036
Publication Date 14.08.2014
International Application No. PCT/JP2014/051821
International Filing Date 28.01.2014
Chapter 2 Demand Filed 01.12.2014
IPC
C04B 41/89 2006.1
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
80of only ceramics
81Coating or impregnating
89for obtaining at least two superposed coatings having different compositions
C04B 41/87 2006.1
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
80of only ceramics
81Coating or impregnating
85with inorganic materials
87Ceramics
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
C30B 25/12 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
C30B 29/36 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
H01L 21/683 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
C04B 35/522
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
35Shaped ceramic products characterised by their composition
515based on non-oxide ceramics
52based on carbon, e.g. graphite
522Graphite
C04B 41/00
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
C04B 41/009
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
009characterised by the material treated
C04B 41/4529
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
45Coating or impregnating
4505characterised by the method of application
4529applied from the gas phase
C04B 41/5059
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
45Coating or impregnating
50with inorganic materials
5053non-oxide ceramics
5057Carbides
5059Silicon carbide
C04B 41/5061
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
41After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
45Coating or impregnating
50with inorganic materials
5053non-oxide ceramics
5057Carbides
5061Titanium carbide
Applicants
  • 東洋炭素株式会社 TOYO TANSO CO., LTD. [JP]/[JP]
Inventors
  • 篠原 正人 SHINOHARA, Masato
Agents
  • 特許業務法人 宮▲崎▼・目次特許事務所 MIYAZAKI & METSUGI
Priority Data
2013-02116606.02.2013JP
2013-02116706.02.2013JP
2013-02116806.02.2013JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
(FR) COMPOSITE DE CARBURE DE SILICIUM-CARBURE DE TANTALE ET SUSCEPTEUR
(JA) 炭化ケイ素-炭化タンタル複合材及びサセプタ
Abstract
(EN) Provided is a silicon carbide-tantalum carbide composite exhibiting excellent durability. This silicon carbide-tantalum carbide composite (1) is equipped with: a body (10) having at least one section of the surface layer thereof configured from a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is positioned on the first silicon carbide layer (12). The second silicon carbide layer (13) is positioned between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of 1.2 or higher as measured by x-ray photoelectron spectroscopy. The second silicon carbide layer (13) also has a peak strength ratio (G/D) of carbon G-band to D-band of 1.0 or higher as measured by Raman spectroscopy.
(FR) L'invention porte sur un composite de carbure de silicium-carbure de tantale présentant une excellente durabilité. Ce composite de carbure de silicium-carbure de tantale (1) est pourvu de : un corps (10) ayant au moins une section de sa couche de surface formée à partir d'une première couche de carbure de silicium (12) ; une couche de carbure de tantale (20) ; et une seconde couche de carbure de silicium (13). La couche de carbure de tantale (20) est placée sur la première couche de carbure de silicium (12). La seconde couche de carbure de silicium (13) est placée entre la couche de carbure de tantale (20) et la première couche de carbure de silicium (12). La seconde couche de carbure de silicium (13) a un rapport de composition de C/Si, mesuré par spectroscopie de photoélectrons XPS, supérieur ou égal à 1,2. La seconde couche de carbure de silicium (13) a également un rapport des intensités des pics (G/D) de la bande G du carbone à la bande D du carbone, mesuré par spectroscopie Raman, supérieur ou égal à 1,0.
(JA)  耐久性に優れた炭化ケイ素-炭化タンタル複合材を提供する。 炭化ケイ素-炭化タンタル複合材1は、表層の少なくとも一部が第1の炭化ケイ素層12により構成された本体10と、炭化タンタル層20と、第2の炭化ケイ素層13とを備える。炭化タンタル層20は、第1の炭化ケイ素層12の上に配されている。第2の炭化ケイ素層13は、炭化タンタル層20と第1の炭化ケイ素層12との間に配されている。第2の炭化ケイ素層13は、X線光電子分光法によって測定されるC/Si組成比が1.2以上である。第2の炭化ケイ素層13は、ラマン分光法によって測定される炭素のGバンド及びDバンドのピーク強度比G/Dが、1.0以上である。
Latest bibliographic data on file with the International Bureau