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1. WO2014122171 - METHOD AND DEVICE FOR PRODUCING A SELECTIVE EMITTER STRUCTURE FOR A SOLAR CELL, SOLAR CELL

Publication Number WO/2014/122171
Publication Date 14.08.2014
International Application No. PCT/EP2014/052242
International Filing Date 05.02.2014
Chapter 2 Demand Filed 08.12.2014
IPC
H01L 31/068 2012.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/022433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022433Particular geometry of the grid contacts
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • ASYS AUTOMATISIERUNGSSYSTEME GMBH [DE]/[DE]
Inventors
  • WANKA, Harald
Agents
  • CLARENBACH, Carl-Philipp
Priority Data
10 2013 202 067.808.02.2013DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINER SELEKTIVEN EMITTERSTRUKTUR FÜR EINE SOLARZELLE, SOLARZELLE
(EN) METHOD AND DEVICE FOR PRODUCING A SELECTIVE EMITTER STRUCTURE FOR A SOLAR CELL, SOLAR CELL
(FR) PROCÉDÉ ET DISPOSITIF PERMETTANT DE FABRIQUER UNE STRUCTURE ÉMETTRICE SÉLECTIVE DESTINÉE À UNE CELLULE SOLAIRE, ET CELLULE SOLAIRE
Abstract
(DE) Die Erfindung betrifft ein Verfahren zur Herstellung einer selektiven Emitterstruktur (8) auf einer Nutzseite (3) einer Solarzelle (1), wobei die Emitterstruktur (8) eine dotierte Emitterschicht (4) und mehrere auf der Emitterschicht angeordnete Kontaktelemente (5), insbesondere Kontaktfinger, aufweist, und wobei die Emitterschicht (4) im Bereich unterhalb der Kontaktelemente (5) mit einer höheren Dotierung versehen ist als im Bereich zwischen den Kontaktelementen (5). Folgende Schritte sind vorgesehen: a) Bereitstellen der Solarzelle (1) mit einer insgesamt dotierten Emitterschicht, b) Herstellen der Kontaktelemente (5) auf der Emitterschicht (4), und c) verringern der Dotierung der Emitterschicht (4) im Bereich zwischen den Kontaktelementen (5) durch ätzende Bearbeitung der gesamten Nutzseite (3) der Solarzelle (1). Ferner betrifft die Erfindung eine Vorrichtung sowie eine Solarzelle.
(EN) The invention relates to a method for producing a selective emitter structure (8) on a useful side (3) of a solar cell (1), wherein the emitter structure (8) comprises a doped emitter layer (4) and several contact elements (5), in particular contact fingers, arranged on the emitter layer, and wherein the emitter layer (4) is provided with higher doping in the region below the contact elements (5) than in the region between the contact elements (5). The following steps are provided: a) providing the solar cell (1) having an emitter layer that is doped overall, b) producing the contact elements (5) on the emitter layer (4), and c) reducing the doping of the emitter layer (4) in the region between the contact elements (5) by an etching processing of the entire useful side (3) of the solar cell (1). The invention further relates to a device and a solar cell.
(FR) L'invention concerne un procédé permettant de fabriquer une structure émettrice (8) sélective se trouvant sur une face utile (3) d'une cellule solaire (1), la structure émettrice (8) comportant une couche émettrice (4) dopée et plusieurs éléments de contact (5), s'agissant notamment de doigts de contact, qui sont disposés sur ladite couche émettrice. Dans la zone en-dessous des éléments de contact (5), la couche émettrice (4) présente un dopage plus important que dans la zone entre les éléments de contact (5). Ledit procédé comporte les étapes consistant à : a) fournir la cellule solaire (1) comportant une couche émettrice pourvue d'un dopage global, b) réaliser les éléments de contact (5) sur la couche émettrice (4), et c) diminuer le dopage de la couche émettrice (4) dans la zone entre les éléments de contact (5) en soumettant l'intégralité de la face utile (3) de la cellule solaire (1) à un traitement par gravure chimique. En outre, l'invention concerne un dispositif ainsi qu'une cellule solaire.
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