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1. WO2014118085 - METHOD FOR DEPOSITING A LAYER WITH A HIGH DEGREE OF PURITY ON A SUBSTRATE

Publication Number WO/2014/118085
Publication Date 07.08.2014
International Application No. PCT/EP2014/051384
International Filing Date 24.01.2014
IPC
C23C 14/24 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
C23C 14/30 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
28by wave energy or particle radiation
30by electron bombardment
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
CPC
B23K 15/00
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
15Electron-beam welding or cutting
B23K 15/0006
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
15Electron-beam welding or cutting
0006specially adapted for particular articles
B23K 15/08
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
15Electron-beam welding or cutting
08Removing material, e.g. by cutting, by hole drilling
B23K 2101/40
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
2101Articles made by soldering, welding or cutting
36Electric or electronic devices
40Semiconductor devices
B23K 2103/56
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
2103Materials to be soldered, welded or cut
50Inorganic material, e.g. metals, not provided for in B23K2103/02B23K2103/26
56semiconducting
B28D 1/221
BPERFORMING OPERATIONS; TRANSPORTING
28WORKING CEMENT, CLAY, OR STONE
DWORKING STONE OR STONE-LIKE MATERIALS
1Working stone or stone-like materials, e.g. brick, concrete ; or glass; , not provided for elsewhere; Machines, devices, tools therefor
22by cutting, e.g. incising
221by thermic methods
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V. [DE]/[DE]
Inventors
  • TEMMLER, Dietmar
  • MATTAUSCH, Gösta
  • SAAGER, Stefan
  • MORGNER, Henry
Priority Data
10 2013 201 510.030.01.2013DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUM ABSCHEIDEN EINER SCHICHT MIT HOHEM REINHEITSGRAD AUF EINEM SUBSTRAT
(EN) METHOD FOR DEPOSITING A LAYER WITH A HIGH DEGREE OF PURITY ON A SUBSTRATE
(FR) PROCÉDÉ POUR DÉPOSER UNE COUCHE SUR UN SUBSTRAT, AVEC UN DEGRÉ DE PURETÉ ÉLEVÉ
Abstract
(DE) Die Erfindung betrifft ein Verfahren zum Abscheiden einer Schicht mit hohem Reinheitsgrad auf einem Substrat innerhalb einer Vakuumkammer mit den Verfahrensschritten: • a) tiegelloses Deponieren eines Blockes (1) bestehend aus einem Verdampfungsmaterial innerhalb der Vakuumkammer; • b) Herstellen einer elektrisch leitfähigen Verbindung zwischen dem Block und dem Spannungspotenzial der elektrischen Masse der Vakuumkammer; • c) ringförmiges, lokal begrenztes Aufschmelzen des Verdampfungsmaterials innerhalb eines inneren Bereiches (3) der Oberfläche des Blockes (1) mittels eines Elektronenstrahls, indem der innere Bereich (3) beginnend an dessen äußerer Begrenzung mittels des Elektronenstrahls auf in sich geschlossenen oder spiralförmigen Bahnen mit kleiner werdendem Bahnradius überstrichen wird; • d) Verdampfen von Verdampfungsmaterial aus einem zentralen Bereich (5) des inneren Bereichs (3) mittels des Elektronenstrahls; • e) Verdampfen von Verdampfungsmaterial aus dem inneren Bereich (3) mittels des Elektronenstrahls und Abscheiden einer Schicht auf dem Substrat.
(EN) The invention relates to a method for depositing a layer with a high degree of purity on a substrate within a vacuum chamber, comprising the method steps of: • a) crucibleless depositing of a block (1) consisting of an evaporation material within the vacuum chamber; • b) establishing an electrically conductive connection between the block and the voltage potential of the electrical earth of the vacuum chamber; • c) annular, locally delimited melting of the evaporation material within an inner region (3) of the surface of the block (1) by means of an electron beam, in that the • inner region (3) is passed over, beginning at its outer delimitation, by means of the electron beam on continuous or spiral paths with an increasingly smaller path radius; • d) evaporating evaporation material from a central region (5) of the inner region (3) by means of the electron beam; • e) evaporating evaporation material from the inner region (3) by means of the electron beam and depositing a layer on the substrate.
(FR) Procédé pour déposer une couche sur un substrat, avec un degré de pureté élevé, à l'intérieur d'une chambre à vide. Ce procédé comprend les étapes suivantes : a) dépôt, sans creuset, d'un bloc (1) constitué d'un matériau d'évaporation à l'intérieur d'une chambre à vide; b) création d'une liaison électriquement conductrice entre ledit bloc et le potentiel de tension de la masse électrique de la chambre à vide; c) fusion annulaire localement limitée du matériau d'évaporation dans une zone intérieure (3) de la surface du bloc (1) à l'aide d'un faisceau d'électrons, par un balayage de la zone intérieure (3) commençant à partir de la limite extérieure de celle-ci, à l'aide dudit faisceau d'électrons, sur des trajectoires fermées sur elles-mêmes ou en spirale, le rayon desdites trajectoires allant en diminuant; d) évaporation du matériau d'évaporation à partir d'une zone centrale (5) de la zone intérieure (3) à l'aide dudit faisceau d'électrons; e) évaporation du matériau d'évaporation à partir de la zone intérieure (3) à l'aide dudit faisceau d'électrons et dépôt d'une couche sur le substrat.
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