Processing

Please wait...

Settings

Settings

Goto Application

1. WO2014111386 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Publication Number WO/2014/111386
Publication Date 24.07.2014
International Application No. PCT/EP2014/050612
International Filing Date 14.01.2014
IPC
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/18 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18within the light emitting region
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
CPC
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • LEHNHARDT, Thomas
  • EICHFELDER, Marcus
  • OFF, Jürgen
  • HAHN, Berthold
  • HERTKORN, Joachim
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2013 200 507.515.01.2013DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) COMPOSANT OPTOÉLECTRONIQUE À SEMI-CONDUCTEUR
Abstract
(DE) Die Erfindung betrifft ein optoelektronisches Halbleiterbauelement mit einer aktiven Zone zur Erzeugung von Licht, wobei die aktive Zone wenigstens eine erste Schicht mit In aufweist, wobei die erste Schicht an eine zweite Schicht grenzt, wobei im Grenzbereich zwischen der ersten und der zweiten Schicht eine Submonolage einer Zwischenschicht mit Aluminium vorgesehen ist. Zudem betrifft die Erfindung ein Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements.
(EN) The invention relates to an optoelectronic semiconductor component having an active zone for generating light, wherein the active zone has at least one first layer containing In, wherein the first layer bounds a second layer, wherein a submonolayer of an intermediate layer containing aluminium is provided in the boundary region between the first and second layers. The invention further relates to a method for producing an optoelectronic semiconductor component.
(FR) L'invention concerne un composant optoélectronique à semi-conducteur pourvu d'une zone active permettant de produire de la lumière, la zone active comprenant au moins une première couche présentant In. La première couche est adjacente à une seconde couche, une sous-monocouche d'une couche intermédiaire étant pourvue d'aluminium dans la zone limite entre la première et la seconde couche. L'invention concerne en outre un procédé de fabrication d'un composant optoélectronique à semi-conducteur.
Related patent documents
Latest bibliographic data on file with the International Bureau