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1. WO2014110851 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2014/110851
Publication Date 24.07.2014
International Application No. PCT/CN2013/071634
International Filing Date 18.02.2013
IPC
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/0257
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
H01L 21/26513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
H01L 21/3083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
3083characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
H01L 21/31053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
H01L 21/31111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
Inventors
  • 朱慧珑 ZHU, Huilong
Agents
  • 中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.
Priority Data
201310014872.915.01.2013CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(ZH) 半导体器件及其制造方法
Abstract
(EN) Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a substrate formed with a well region, wherein the well region comprises a first part and a second part, and the first part has a doping concentration lower than that of the second part and is closer to a surface of the substrate; a fin structure formed on the surface of the substrate; an isolating layer formed on the surface of the substrate, wherein a part of the fin structure is exposed out of the isolating layer, and the exposed part of the fin structure serves as a fin of the semiconductor device; and a gate stack formed on the isolating layer and intersecting the fin, wherein a penetration blocking portion is only formed in a region below the intersecting part of the fin and the gate stack.
(FR) La présente invention concerne un dispositif à semi-conducteur et un procédé de fabrication associé. Le dispositif à semi-conducteur comprend : un substrat formé conjointement avec une région de cavité, la région de cavité comprenant une première partie et une seconde partie, et la première partie ayant une concentration en dopage inférieure à celle de la seconde partie et étant plus près d'une surface du substrat; une structure d'ailette formée sur la surface du substrat; une couche isolante formée sur la surface du substrat, une partie de la structure d'ailette étant exposée hors de la couche isolante, et la partie exposée de la structure d'ailette servant d'ailette du dispositif à semi-conducteur; et un empilage de porte qui est formé sur la couche isolante et qui croise l'ailette, une partie de blocage de pénétration étant formée uniquement dans une région sous la partie de croisement de l'ailette et de l'empilage de porte.
(ZH) 本申请公开了一种半导体器件及其制造方法。包括:衬底,衬底中形成有阱区,所述阱区包括第一部分和第二部分,第一部分相比于第二部分掺杂浓度较低,且更接近衬底的表面;在衬底的表面上形成的鳍状结构;在衬底的表面上形成的隔离层,该隔离层露出鳍状结构的一部分,鳍状结构的露出部分用作该半导体器件的鳍;以及在隔离层上形成的与鳍相交的栅堆叠,其中,仅在鳍与栅堆叠相交的部分下方的区域中形成有穿通阻挡部。
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