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1. WO2014110183 - SYSTEMS AND METHODS TO UPDATE REFERENCE VOLTAGES IN RESPONSE TO DATA RETENTION IN NON-VOLATILE MEMORY

Publication Number WO/2014/110183
Publication Date 17.07.2014
International Application No. PCT/US2014/010750
International Filing Date 08.01.2014
IPC
G11C 11/56 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/26 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
G11C 16/34 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
CPC
G06F 12/0246
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
0223User address space allocation, e.g. contiguous or non contiguous base addressing
023Free address space management
0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
0246in block erasable memory, e.g. flash memory
G11C 11/5642
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
5642Sensing or reading circuits; Data output circuits
G11C 16/26
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
G11C 16/3495
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
3495Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
G11C 29/50004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation ; ; Subsequent repair; Testing stores during standby or offline operation
04Detection or location of defective memory elements ; , e.g. cell constructio details, timing of test signals
50Marginal testing, e.g. race, voltage or current testing
50004of threshold voltage
Applicants
  • SANDISK TECHNOLOGIES INC. [US]/[US]
Inventors
  • DESIREDDI, Sateesh
  • NARADASI, Jayaprakash
  • VENKITACHALAM, Anand
  • D'ABREU, Manuel, Antonio
  • SKALA, Stephen
Agents
  • TOLER, Jeffrey, G.
Priority Data
13/771,89420.02.2013US
178/CHE/201311.01.2013IN
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEMS AND METHODS TO UPDATE REFERENCE VOLTAGES IN RESPONSE TO DATA RETENTION IN NON-VOLATILE MEMORY
(FR) SYSTÈMES ET PROCÉDÉS PERMETTANT DE METTRE À JOUR DES TENSIONS DE RÉFÉRENCE EN RÉPONSE À LA RÉTENTION DE DONNÉES DANS UNE MÉMOIRE NON VOLATILE
Abstract
(EN) A data storage device includes non-volatile memory and a controller. The controller is configured to, at a first time, determine a first count of storage elements having threshold voltages within a voltage range that corresponds to a first reference voltage. The controller is further configured to, at a second time, determine a second count of storage elements having threshold voltages within the voltage range. The controller is further configured to calculate an updated first reference voltage at least partially based on the first reference voltage, the first count, and the second count.
(FR) L'invention concerne un dispositif de stockage de données comprenant une mémoire non volatile et un contrôleur. Le contrôleur est configuré pour déterminer, à un premier instant, un premier nombre d'éléments de stockage ayant des tensions de seuil dans une plage de tensions qui correspond à une première tension de référence. Le contrôleur est également configuré pour déterminer, à un second instant, un second nombre d'éléments de stockage ayant des tensions de seuil dans la plage de tensions. Le contrôleur est également configuré pour calculer une première tension de référence mise à jour d'après au moins en partie la première tension de référence, le premier nombre et le second nombre.
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